Product Information

TK100E06N1,S1X(S

TK100E06N1,S1X(S electronic component of Toshiba

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4788 ea
Line Total: USD 1.48

776 - Global Stock
Ships to you between
Tue. 04 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
776 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.4788
10 : USD 1.3343
50 : USD 1.2551
100 : USD 1.1661
500 : USD 1.1264
1000 : USD 1.1086

41 - WHS 2


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 43
Multiples : 43
43 : USD 2.2464

97 - WHS 3


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 9
Multiples : 1
9 : USD 4.5119
18 : USD 2.2025
50 : USD 1.9584
100 : USD 1.688

Read More Specifications

     
Manufacturer
Product Category
Mounting
Case
Kind Of Package
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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Additional Infomation About Product

The Toshiba TK100E06N1,S1X(S transistor is a unipolar N-MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a maximum drain-source voltage of 60V, a maximum drain current of 100A, and a maximum drain power dissipation of 255W. It is packaged in a TO220AB package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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