Product Information

TA75S01FTE85LF

TA75S01FTE85LF electronic component of Toshiba

Datasheet
Operational Amplifiers - Op Amps x34 1 CIRCUIT OP AMP

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.323
10 : USD 0.7668
100 : USD 0.1782
1000 : USD 0.1123
3000 : USD 0.0918
9000 : USD 0.0832
24000 : USD 0.0777
45000 : USD 0.0702
99000 : USD 0.067
N/A

Obsolete
0 - WHS 2

MOQ : 6000
Multiples : 3000
6000 : USD 0.1406
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Number of Channels
Supply Voltage - Max
Supply Voltage - Min
Vos - Input Offset Voltage
Ib - Input Bias Current
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Shutdown
CMRR - Common Mode Rejection Ratio
Series
Packaging
Pd - Power Dissipation
Product
Technology
Brand
Dual Supply Voltage
Maximum Dual Supply Voltage
Minimum Dual Supply Voltage
Operating Supply Voltage
Factory Pack Quantity :
Supply Current Per Channel
Supply Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Voltage Gain Db
LoadingGif

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TA75S01F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA75S01F Single Operational Amplifier Features Unit: mm In the linear mode the input common mode voltage range includes ground. The internally compensated Operational Amplifier is small package. Low power dissipation and power drain suitable for battery operation. Differential input voltage range equal to the power supply voltage. Large output voltage swing: 0V to 3.4V (V = 5V) DC DC DC Wide power supply voltage range and single power supply is possible. Single supply 3V to 12V or dual supplies 1.5V to 6V . DC DC DC DC Marking (Top View) Weight:0.014g (typ.) Pin Connection (Top View) Start of commercial production 1991-02 1 2017-10-03 TA75S01F Equivalent Circuit Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Supply voltage V , V 6 or 12 V CC EE Differential input voltage DV 12 V IN Input voltage V 0.3 to V V IN CC Power dissipation P 200 mW D Operating temperature T 40 to 85 C opr Storage temperature T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (VCC = 5V, VEE = GND, Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Input offset voltage V 1 Rg10k 2 7 mV IO Input offset current I 2 5 50 nA IO Input bias current I 2 45 250 nA I Common mode input voltage CMV 3 0 V 1.5 V IN CC Supply current I 4 0.4 0.8 mA CC Voltage gain G RL2k 86 100 dB V Maximum output voltage swing V 5 RL = 2k 0 3.4 V op-p Common mode rejection ratio CMRR 3 65 85 dB Supply voltage rejection ratio SVRR Rg = 10k 65 100 dB Source current I 6 IN () = 0V, IN (+) = 1V 20 40 mA source Sink current I 7 IN () = 1V, IN (+) = 0V 10 20 mA sink Unity gain cross frequency f 0.3 MHz T 2 2017-10-03

Tariff Desc

8542.33.00 43 No -- Amplifiers

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits Digital.
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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