Product Information

TB6608FNG(C8,EL,HJ

TB6608FNG(C8,EL,HJ electronic component of Toshiba

Datasheet
Stepping Motor Driver 3.3V 20-Pin SSOP T/R

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 0.9698 ea
Line Total: USD 24.24

0 - Global Stock
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 11
Multiples : 1
11 : USD 1.7206
50 : USD 1.5375
100 : USD 1.2875

0 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 25
Multiples : 1
25 : USD 0.9698

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
Type
Operating Supply Voltage
Operating Temperature
Packaging
Operating Current
Operating Temperature Min
Rad Hardened
Operating Supply Voltage Min
Package Type
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TB6608FNG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6608FNG Stepping Motor Driver IC The TB6608FNG is a PWM constant-current type stepping motor driver IC designed for sinusoidal-input micro-step control of stepping motors. The TB6608FNG can be used in applications that require 2-phase, 1-2-phase, W1-2-phase and 2W1-2 phase excitation modes. The TB6608FNG is capable of forward and reverse driving of a 2-phase bipolar stepping motor using only a clock signal. Features Weight: 0.09 g (typ.) Motor power supply voltage: V = 15 V (max) M Control power supply voltage: V = 2.7 to 6 V CC Output current: Iout 0.8 A (max) Output ON-resistance: Ron = 1.5 (upper and lower sum V = 5 V) M Decoder that enables microstep control with the clock signal Selectable phase excitation modes (2, 1-2, W1-2 and 2W1-2) Internal pull-down resistors on inputs: 200 k (typ.) Output monitor pin ( MO ) Thermal shutdown (TSD) and undervoltage lockout (UVLO) circuits Small surface-mount package (SSOP20: 0.65 mm lead pitch) This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at reasonable levels. Do not insert devices in the wrong orientation or incorrectly. Otherwise, it may cause the device breakdown, damage and/or deterioration. 1 2014-10-01 2014 TOSHIBA Corporation TB6608FNG Block Diagram GND STBY V MO CC 15 2 1 16 STANBY UVLO Pre- 13 AO1 H-bridge 2 V driver A 11 AO2 M1 4 PWM M2 5 timer Decoder for 12 RFA microstep CW/CCW 7 control CK 20 2 1-2 W1-2 RESET 14 2W1-2 TSD phase 6 VM ENABLE 19 DCY 18 10 BO1 Pre- B.G H-bridge B driver 8 BO2 Vref 2 switches TQ 17 PWM timer 0.125 V, 0.5 V 9 RFB OSC 3 OSC Vref Voltage Setting Input Vref TQ L 0.125 V H 0.5 V 2 2014-10-01

Tariff Desc

8473.30.00 - Parts and accessories of the machines of 8471 AUTOMATIC DATA PROCESSING MACHINES AND UNITS THEREOF; MAGNETIC OR OPTICAL READERS, MACHINES FOR TRANSCRIBING DATA ONTO DATA MEDIA IN CODED FORM AND MACHINES FOR PROCESSING SUCH DATA, NOT ELSEWHERE SPECIFIED OR INCLUDED: Free
62 No .Cards (including network, sound, video, IDE, SCSI, and other similar cards)
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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