Product Information

TC58CVG0S3HRAIG

TC58CVG0S3HRAIG electronic component of Toshiba

Datasheet
NAND Flash 3.3V 1Gb 24nm Serial NAND

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Warehouse 1

MOQ : 1
Multiples : 1
1 : USD 9.2988
10 : USD 3.3453
25 : USD 3.2886
50 : USD 3.2773
100 : USD 2.9371
250 : USD 2.835
500 : USD 2.8237
1000 : USD 2.6309
2500 : USD 2.5175
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Interface Type
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Memory Type
Product
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Subcategory
Cnhts
Hts Code
Mxhts
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TC58CVG0S3HxAIx TOSHIBA Serial Interface NAND Technical Data Sheet Rev. 1.1 2016 11 08 TOSHIBA Storage & Electronic Devices Solutions Memory Division 2016 TOSHIBA CORPORATION 0 2016-11-08C TC58CVG0S3HxAIx CONTENTS 1. Introduction .............................................................................................................................................. 4 1.1. General Description ................................................................................................................................. 4 1.2. Definitions and Abbreviations ................................................................................................................. 4 1.3. Features .................................................................................................................................................... 5 2. Memory Organization .............................................................................................................................. 6 2.1. Pin Descriptions ....................................................................................................................................... 6 2.2. Pin Assignment (Top View) ...................................................................................................................... 6 2.3. Block Diagram .......................................................................................................................................... 7 2.4. Cell Layout ............................................................................................................................................... 7 2.5. Addressing ................................................................................................................................................ 8 2.6. Valid Blocks .............................................................................................................................................. 8 3. Physical Interface..................................................................................................................................... 9 3.1. Absolute Maximum Rating ...................................................................................................................... 9 3.2. Capacitance .............................................................................................................................................. 9 3.3. Recommended DC Operating Conditions ............................................................................................... 9 3.4. Signal Timing ......................................................................................................................................... 10 3.5. AC Characteristics ................................................................................................................................. 12 3.6. DC Operating Characteristics ............................................................................................................... 12 3.7. Programming, Reading and Erasing Characteristics ........................................................................... 13 3.8. Power ON/OFF Sequence ...................................................................................................................... 13 3.9. AC Test Condition .................................................................................................................................. 13 4. Command Description and Device Operation ....................................................................................... 14 4.1. Command Set ......................................................................................................................................... 14 4.2. Page Read Operation ............................................................................................................................. 15 4.2.1. Read Cell Array (13h) ............................................................................................................................ 15 4.2.2. Read Buffer (03h or 0Bh) ....................................................................................................................... 16 4.2.3. Read Buffer x2 (3Bh).............................................................................................................................. 17 4.2.4. Read Buffer x4 (6Bh).............................................................................................................................. 18 4.3. Page Read Operation - High Speed Mode ............................................................................................. 18 4.4. Page Program Operation ....................................................................................................................... 19 4.4.1. Program Load (02h) ............................................................................................................................... 19 4.4.2. Program Execute (10h) .......................................................................................................................... 20 4.4.3. Program Load Random Data (84h) ....................................................................................................... 21 4.5. Internal Data Move Operation .............................................................................................................. 21 4.6. Block Erase (D8h) .................................................................................................................................. 22 4.7. Reset (FFh or FEh) ................................................................................................................................ 23 4.8. Write Enable (06h) / Write Disable (04h) .............................................................................................. 24 4.9. Set Feature (1Fh) / Get Feature (0Fh) .................................................................................................. 25 4.9.1. Set Feature (1Fh) ................................................................................................................................... 27 4.9.2. Get Feature (0Fh) .................................................................................................................................. 27 4.10. Block Lock Operation ............................................................................................................................. 28 4.11. Block Protection Operation (One Time Program) ................................................................................. 28 4.11.1. Protect Execute (2Ah) ............................................................................................................................ 29 4.12. Parameter Page Read Operation ........................................................................................................... 30 4.13. Read ID (9Fh) ......................................................................................................................................... 31 4.14. Unique ID Read Operation .................................................................................................................... 31 4.15. Bad Block Inhibit ................................................................................................................................... 31 4.16. Internal ECC .......................................................................................................................................... 32 4.16.1. ECC Switch ............................................................................................................................................ 32 4.16.2. ECC Status ............................................................................................................................................. 32 4.16.3. ECC Bit Flip Count Detection ............................................................................................................... 32 4.16.4. ECC Bit Flip Count Report .................................................................................................................... 33 4.16.5. ECC Maximum Bit Flip Count Report .................................................................................................. 34 5. Package Information .............................................................................................................................. 35 5.1. WSON8 (P-WSON8-0608-1.27-003) ...................................................................................................... 35 5.2. SOP16 (P-SOP16-1111-1.27-001) ........................................................................................................... 35 6. Application Notes ................................................................................................................................... 36 6.1. Prohibition of Unspecified Commands .................................................................................................. 36 6.2. Restriction of Commands while in the Busy State ............................................................................... 36 2016 TOSHIBA CORPORATION 1 2016-11-08C

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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