TC74LVX32F(F) Toshiba

TC74LVX32F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX32F, TC74LVX32FT Quad 2-Input OR Gate TC74LVX32F The TC74LVX32F/ FT is a high-speed CMOS 2-input OR gate fabricated with silicon gate CMOS technology. Designed for use in 3-V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation. This device is suitable for low-voltage and battery operated systems. The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 5.5V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5V to 3V systems and two TC74LVX32FT supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. Features High-speed: t = 4.4 ns (typ.) (V = 3.3 V) pd CC Low power dissipation: I = 2 A (max) (Ta = 25C) CC Input voltage level: V = 0.8 V (max) (V = 3 V) IL CC V = 2.0 V (min) (V = 3 V) IH CC Weight Power-down protection provided on all inputs SOP14-P-300-1.27A : 0.18 g (typ.) Balanced propagation delays: t t pLH pHL TSSOP14-P-0044-0.65A : 0.06 g (typ.) Low noise: V = 0.5 V (max) OLP Pin and function compatible with 74HC32 Start of commercial production 1993-01 1 2014-03-01 TC74LVX32F/FT Pin Assignment (top view) IEC Logic Symbol (1) > 1A 1 (3) (2) 1Y 1B 1A 1 14 V CC (4) 2A (6) (5) 2Y 1B 2 13 4B 2B (9) 3A (8) 1Y 3 12 4A (10) 3Y 3B (12) 4A (11) 2A 4 11 4Y (13) 4Y 4B 2B 5 10 3B 2Y 6 9 3A GND 7 8 3Y Truth Table Inputs Outputs A B Y L L L L H H H L H H H H Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7.0 V CC DC input voltage V 0.5 to 7.0 V IN DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 180 mW D Storage temperature T 65 to 150 C stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2014-03-01