TC74LVX08F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX08F, TC74LVX08FT Quad 2-Input AND Gate TC74LVX08F The TC74LVX08F/ FT is a high-speed CMOS 2-input AND gate fabricated with silicon gate CMOS technology. Designed for use in 3-V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation. This device is suitable for low-voltage and battery operated systems. The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 5.5V can be applied to the input pins without regard to the supply voltage. TC74LVX08FT This device can be used to interface 5V to 3V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. Features High-speed: t = 4.8 ns (typ.) (V = 3.3 V) pd CC Low power dissipation: I = 2 A (max) (Ta = 25C) CC Input voltage level: V = 0.8 V (max) (V = 3 V) IL CC Weight V = 2.0 V (min) (V = 3 V) IH CC SOP14-P-300-1.27A : 0.18 g (typ.) Power-down protection is provided on all inputs TSSOP14-P-0044-0.65A : 0.06 g (typ.) Balanced propagation delays: t t pLH pHL Low noise: V = 0.5 V (max) OLP Pin and function compatible with 74HC08 Start of commercial production 1993-01 1 2014-03-01 TC74LVX08F/FT Pin Assignment (top view) IEC Logic Symbol (1) 1A &(3) (2) 1Y 1A 1 14 V CC 1B (4) 2A (6) 1B 2 13 4B (5) 2Y 2B (9) 3A (8) 1Y 12 4A 3 (10) 3Y 3B (12) 2A 4 11 4Y 4A (11) (13) 4Y 4B 2B 5 10 3B 2Y 6 9 3A GND 7 8 3Y Truth Table Inputs Outputs A B Y L L L L H L H L L H H H Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7.0 V CC DC input voltage V 0.5 to 7.0 V IN DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 180 mW D Storage temperature T 65 to 150 C stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2014-03-01