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TH58NVG2S3HBAI4

TH58NVG2S3HBAI4 electronic component of Toshiba

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NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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1: USD 8.672 ea
Line Total: USD 8.67

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 210
Multiples : 210
210 : USD 6.6801

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Additional Infomation About Product

NAND FLASH MEMORY SLC NAND & BENAND Reliability and Performance Toshibas SLC NAND advanced flash memory products provide cutting-edge endurance and data retention for sensitive or frequently used system data. For long-lasting products or systems working with extremely high data throughput between the host and the memory, Toshiba s SLC is a suitable solution. Toshibas new BENAND removes the burden of error correction code (ECC) from the host processor by embedding ECC directly in the hardware while maintaining the same specifications, reliability and performance as raw SLC NAND. APPLICATIONS INVENTOR OF Industrial Consumer Electronics FLASH M E M O R Y Multimedia Smart Metering & Intelligent Lighting FEATURES ADVANTAGES BENEFITS Broad lineup to meet customer A suitable solution for long -lasting SLC NAND 24nm demand for different densities storage of significant or frequently 1Gb 128Gb 24nm technology for cost optimization changed data Extended temperature range Long data retention, extreme write/ Reduced BOM cost due to latest TSOP and BGA package erase performance 24nm production technology BENAND 24nm Small package available to reduce Supports smaller board size (e.g. Built-in ECC SLC NAND board space for mobile devices ) 1Gb 8Gb No ECC operation is required on the Using Toshiba BENAND, it is On -chip H/W ECC host side (BENAND) possible to utilize the latest 24nm Same reliability and performance Produced in Toshiba s cutting-edge SLC NAND flash technology even as raw SLC technology flash factory if the existing platform cannot Same hardware interface and support higher bit ECC. No package as raw SLC hardware change necessary. SPECIFICATIONS Product / Features SLC NAND BENAND (SLC+ECC) Density 1Gb 128Gb 1Gb 8Gb Technology 24nm ECC (Error Correction Code) Required on Host Side Embedded on Memory Chip -40C to 85C Temperature 0C to 70C Package TSOP and BGA BENAND SLC WITH EMBEDDED ECC FOR BOM REDUCTION AND SYSTEM FLEXIBILITY HOST SYSTEM BENAND Data read from the SLC is 8bit already error corrected Main CPU ECC Raw SLC NAND 24nm Memory Controller Data read from the SLC is 1bit ECC Raw SLC NAND 43nm not error corrected www.toshiba.semicon-storage.com www.toshiba.semicon-storage.comSLC NAND PRODUCT LIST Density Part Number Techn. Page Size Vcc ECC Temperature Package TC58NVG0S3HTA00 24nm (2048+128)x8 bit 3.3V 8bit/512B 0C to 70C 48TSOP 12x20 TC58NYG0S3HBAI4 24nm (2048+128)x8 bit 1.8V 8bit/512B -40C to 85C 63BGA 9x11 TC58NVG0S3HTAI0 24nm (2048+128)x8 bit 3.3V 8bit/512B -40C to 85C 48TSOP 12x20 1Gb TC58NVG0S3HBAI4 24nm (2048+128)x8 bit 3.3V 8bit/512B -40C to 85C 63BGA 9x11 TC58NYG0S3HBAI6 24nm (2048+128)x8 bit 1.8V 8bit/512B -40C to 85C 67BGA 6.5x8 TC58NVG0S3HBAI6 24nm (2048+128)x8 bit 3.3V 8bit/512B -40C to 85C 67BGA 6.5x8 TC58NVG1S3HTA00 24nm (2048+128)x8 bit 3.3V 8bit/512B 0C to 70C 48TSOP 12x20 TC58NYG1S3HBAI4 24nm (2048+128)x8 bit 1.8V 8bit/512B -40C to 85C 63BGA 9x11 2Gb TC58NVG1S3HTAI0 24nm (2048+128)x8 bit 3.3V 8bit/512B -40C to 85C 48TSOP 12x20 TC58NVG1S3HBAI4 24nm (2048+128)x8 bit 3.3V 8bit/512B -40C to 85C 63BGA 9x11 TC58NYG1S3HBAI6 24nm (2048+128)x8 bit 1.8V 8bit/512B -40C to 85C 67BGA 6.5x8 TC58NVG1S3HBAI6 24nm (2048+128)x8 bit 3.3V 8bit/512B -40C to 85C 67BGA 6.5x8 TH58NVG2S3HTA00 24nm (2048+128)x8 bit 3.3V 8bit/512B 0C to 70C 48TSOP 12x20 TC58NVG2S0HTA00 24nm (4096+256)x8 bit 3.3V 8bit/512B 0C to 70C 48TSOP 12x20 TC58NVG2S0HTAI0 24nm (4096+256)x8 bit 3.3V 8bit/512B -40C to 85C 48TSOP 12x20 TH58NVG2S3HTAI0 24nm (2048+128)x8 bit 3.3V 8bit/512B -40C to 85C 48TSOP 12x20 TH58NVG2S3HBAI4 24nm (2048+128)x8 bit 3.3V 8bit/512B -40C to 85C 63BGA 9x11 4Gb TH58NYG2S3HBAI4 24nm (2048+128)x8 bit 1.8V 8bit/512B -40C to 85C 63BGA 9x11 TC58NVG2S0HBAI4 24nm (4096+256)x8 bit 3.3V 8bit/512B -40C to 85C 63BGA 9x11 TC58NYG2S0HBAI4 24nm (4096+256)x8 bit 1.8V 8bit/512B -40C to 85C 63BGA 9x11 TC58NVG2S0HBAI6 24nm (4096+256)x8 bit 3.3V 8bit/512B -40C to 85C 67BGA 6.5x8 TC58NYG2S0HBAI6 24nm (4096+256)x8 bit 1.8V 8bit/512B -40C to 85C 67BGA 6.5x8 TH58NVG3S0HTA00 24nm (4096+256)x8 bit 3.3V 8bit/512B 0C to 70C 48TSOP 12x20 TH58NVG3S0HBAI4 24nm (4096+256)x8 bit 3.3V 8bit/512B -40C to 85C 63BGA 9x11 TH58NYG3S0HBAI4 24nm (4096+256)x8 bit 1.8V 8bit/512B -40C to 85C 63BGA 9x11 8Gb TH58NVG3S0HTAI0 24nm (4096+256)x8 bit 3.3V 8bit/512B -40C to 85C 48TSOP 12x20 TH58NVG3S0HBAI6 24nm (4096+256)x8 bit 3.3V 8bit/512B -40C to 85C 67BGA 6.5x8 TH58NYG3S0HBAI6 24nm (4096+256)x8 bit 1.8V 8bit/512B -40C to 85C 67BGA 6.5x8 TH58NVG4S0FTA20 32nm (4096+256)x8 bit 3.3V 4bit/512B 0C to 70C 48TSOP 12x20 16Gb TH58NVG4S0FTAK0 32nm (4096+256)x8 bit 3.3V 4bit/512B -40C to 85C 48TSOP 12x20 TH58NVG4S0FBAID 32nm (4096+256)x8 bit 3.3V 4bit/512B -40C to 85C 63BGA 10x11 TH58NVG4S0HTA20 24nm (4096+256)x8 bit 3.3V 8bit/512B 0C to 70C 48TSOP 12x20 TH58NVG4S0HTAK0 24nm (4096+256)x8 bit 3.3V 8bit/512B -40C to 85C 48TSOP 12x20 TC58NVG5H2HTA00 24nm (8192+1024)x8 bit 3.3V 24bit/1024B 0C to 70C 48TSOP 12x20 32Gb TC58NVG5H2HTAI0 24nm (8192+1024)x8 bit 3.3V 24bit/1024B -40C to 85C 48TSOP 12x20 64Gb TH58NVG6H2HTAK0 24nm (8192+1024)x8 bit 3.3V 24bit/1024B -40C to 85C 48TSOP 12x20 128Gb TH58NVG7H2HTA20 24nm (8192+1024)x8 bit 3.3V 24bit/1024B 0C to 70C 48TSOP 12x20 BENAND PRODUCT LIST Density Part Number Techn. Page Size Vcc ECC Temperature Package TC58BVG0S3HTA00 24nm (2048+64)x8 bit 3.3V internal ECC 0C to 70C 48TSOP 12x20 TC58BYG0S3HBAI4 24nm (2048+64)x8 bit 1.8V internal ECC -40C to 85C 63BGA 9x11 TC58BVG0S3HTAI0 24nm (2048+64)x8 bit 3.3V internal ECC -40C to 85C 48TSOP 12x20 1Gb TC58BVG0S3HBAI4 24nm (2048+64)x8 bit 3.3V internal ECC -40C to 85C 63BGA 9x11 TC58BYG0S3HBAI6 24nm (2048+64)x8 bit 1.8V internal ECC -40C to 85C 67BGA 6.5x8 TC58BVG0S3HBAI6 24nm (2048+64)x8 bit 3.3V internal ECC -40C to 85C 67BGA 6.5x8 TC58BVG1S3HTA00 24nm (2048+64)x8 bit 3.3V internal ECC 0C to 70C 48TSOP 12x20 TC58BYG1S3HBAI4 24nm (2048+64)x8 bit 1.8V internal ECC -40C to 85C 63BGA 9x11 TC58BVG1S3HTAI0 24nm (2048+64)x8 bit 3.3V internal ECC -40C to 85C 48TSOP 12x20 2Gb TC58BVG1S3HBAI4 24nm (2048+64)x8 bit 3.3V internal ECC -40C to 85C 63BGA 9x11 TC58BYG1S3HBAI6 24nm (2048+64)x8 bit 1.8V internal ECC -40C to 85C 67BGA 6.5x8 TC58BVG1S3HBAI6 24nm (2048+64)x8 bit 3.3V internal ECC -40C to 85C 67BGA 6.5x8 TH58BVG2S3HTA00 24nm (2048+64)x8 bit 3.3V internal ECC 0C to 70C 48TSOP 12x20 TC58BVG2S0HTA00 24nm (4096+128)x8 bit 3.3V internal ECC 0C to 70C 48TSOP 12x20 TC58BVG2S0HTAI0 24nm (4096+128)x8 bit 3.3V internal ECC -40C to 85C 48TSOP 12x20 TH58BVG2S3HTAI0 24nm (2048+64)x8 bit 3.3V internal ECC -40C to 85C 48TSOP 12x20 TH58BVG2S3HBAI4 24nm (2048+64)x8 bit 3.3V internal ECC -40C to 85C 63BGA 9x11 4Gb TH58BYG2S3HBAI4 24nm (2048+64)x8 bit 1.8V internal ECC -40C to 85C 63BGA 9x11 TC58BVG2S0HBAI4 24nm (4096+128)x8 bit 3.3V internal ECC -40C to 85C 63BGA 9x11 TC58BYG2S0HBAI4 24nm (4096+128)x8 bit 1.8V internal ECC -40C to 85C 63BGA 9x11 TC58BVG2S0HBAI6 24nm (4096+128)x8 bit 3.3V internal ECC -40C to 85C 67BGA 6.5x8 TC58BYG2S0HBAI6 24nm (4096+128)x8 bit 1.8V internal ECC -40C to 85C 67BGA 6.5x8 TH58BYG2S3HBAI6 24nm (2048+64)x8 bit 1.8V internal ECC -40C to 85C 67BGA 6.5x8 TH58BVG3S0HTA00 24nm (4096+128)x8 bit 3.3V internal ECC 0C to 70C 48TSOP 12x20 TH58BYG3S0HBAI4 24nm (4096+128)x8 bit 1.8V internal ECC -40C to 85C 63BGA 9x11 TH58BVG3S0HTAI0 24nm (4096+128)x8 bit 3.3V internal ECC -40C to 85C 48TSOP 12x20 8Gb TH58BVG3S0HBAI4 24nm (4096+128)x8 bit 3.3V internal ECC -40C to 85C 63BGA 9x11 TH58BVG3S0HBAI6 24nm (4096+128)x8 bit 3.3V internal ECC -40C to 85C 67BGA 6.5x8 TH58BYG3S0HBAI6 24nm (4096+128)x8 bit 1.8V internal ECC -40C to 85C 67BGA 6.5x8 BENAND is the trademark of Toshiba Corporation. Product density is identified based on the maximum density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. Maximum read and write speed may vary depending on the host device, read and write conditions, and file size. Copyright August 2016 Toshiba America Electronic Components, Inc. (TAEC) - All Rights Reserved www.toshiba.semicon-storage.com

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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