Product Information

TK11A65D(STA4,X,M)

TK11A65D(STA4,X,M) electronic component of Toshiba

Datasheet
MOSFET N Trench 650V 11A 4V @ 1mA 700 mΩ @ 5.5A,10V TO-220SIS RoHS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9722 ea
Line Total: USD 0.97

2647 - Global Stock
Ships to you between
Tue. 21 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
191 - WHS 1


Ships to you between
Tue. 21 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.9407
10 : USD 0.7252
50 : USD 0.6184
100 : USD 0.5116
500 : USD 0.4472
1000 : USD 0.415

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The TK11A65D(STA4,X,M) is a Toshiba MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured with N-Trench technology. It has an operating voltage of 650V, a continuous output current rating of 11 Amps, and a threshold voltage of 4 Volts at a current level of 1mA. Its static on-resistance is 700 mO at a current level of 5.5 Amps, and its gate-source voltage rating is 10 Volts. It comes in a TO-220SIS form factor and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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