X-On Electronics has gained recognition as a prominent supplier of TK20E60U,S1X(S MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK20E60U,S1X(S MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK20E60U,S1X(S Toshiba

TK20E60U,S1X(S electronic component of Toshiba
TK20E60U,S1X(S Toshiba
TK20E60U,S1X(S MOSFETs
TK20E60U,S1X(S  Semiconductors

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Part No. TK20E60U,S1X(S
Manufacturer: Toshiba
Category: MOSFETs
Description: Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220
Datasheet: TK20E60U,S1X(S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 12.6533 ea
Line Total: USD 253.07 
Availability - 0
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 20
Multiples : 20
20 : USD 12.6533

   
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We are delighted to provide the TK20E60U,S1X(S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK20E60U,S1X(S and other electronic components in the MOSFETs category and beyond.

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TK20E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60UTK20E60UTK20E60UTK20E60U 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.165 (typ.) DS(ON) (2) High forward transfer admittance: Y = 12 S (typ.) fs (3) Low leakage current: I = 100 A (max) (V = 600 V) DSS DS (4) Enhancement mode: V = 3.0 to 5.0 V (V = 10 V, I = 1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 20 A D Drain current (pulsed) (Note 1) I 40 DP Power dissipation (T = 25) P 190 W c D Single-pulse avalanche energy (Note 2) E 144 mJ AS Avalanche current (Note 3) I 10 A AR Repetitive avalanche energy (Note 3) E 19 mJ AR Reverse drain current (DC) (Note 1) I 20 A DR Reverse drain current (pulsed) (Note 1) I 40 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2010-12 2014-01-06 1 Rev.2.0TK20E60U 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.658 /W th(ch-c) Channel-to-ambient thermal resistance R 83.3 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 2.52 mH, R = 25 , I = 10 A DD ch G AR Note 3: Repetitive rating pulse width limited by maximum channel temperature Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-01-06 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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