Product Information

TK3R1A04PL,S4X

TK3R1A04PL,S4X electronic component of Toshiba

Datasheet
X35 PB-F POWER MOSFET TRANSIST
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

13: USD 0.5193 ea
Line Total: USD 6.75

0 - Global Stock
MOQ: 13  Multiples: 13
Pack Size: 13

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 50
Multiples : 1
50 : USD 0.8796
100 : USD 0.8708
250 : USD 0.8622
500 : USD 0.8535
1000 : USD 0.845
2500 : USD 0.8366
3000 : USD 0.8281
5000 : USD 0.8199
10000 : USD 0.8118

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 50
Multiples : 50
50 : USD 0.667

0 - WHS 3


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 3.6971
10 : USD 1.1236
100 : USD 0.9286
500 : USD 0.7677
1000 : USD 0.6122
5000 : USD 0.597

0 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 13
Multiples : 13
13 : USD 0.5193

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

TK3R1A04PL MOSFETs Silicon N-channel MOS (U-MOS-H) TK3R1A04PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: Q = 17.5 nC (typ.) SW (3) Small output charge: Q = 42 nC (typ.) oss (4) Low drain-source on-resistance: R = 2.5 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 40 V) DSS DS (6) Enhancement mode: V = 1.4 to 2.4 V (V = 10 V, I = 0.5 mA) th DS D 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 2016-07 2016-2021 2021-02-02 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TK3R1A04PL 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage V 40 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1) I 82 A c D Drain current (pulsed) (t = 100 s) (Note 1) I 400 A DP Power dissipation (T = 25 ) P 36 W c D Single-pulse avalanche energy (Note 2) E 43 mJ AS Single-pulse avalanche current (Note 2) I 82 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Isolation voltage (RMS) (t = 1.0 s) V 2000 V ISO(RMS) Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 4.16 /W c th(ch-c) Channel-to-ambient thermal resistance (T = 25 ) R 62.5 a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: V = 32 V, T = 25 (initial), L = 4.9 H, I = 82 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016-2021 2021-02-02 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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