Product Information

TK3R2A10PL,S4X

TK3R2A10PL,S4X electronic component of Toshiba

Datasheet
MOSFET TO-220SIS PD=54W 1MHz PWR MOSFET TRNS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7485 ea
Line Total: USD 2.75

378 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
378 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 2.7485
10 : USD 2.2655
100 : USD 1.817
500 : USD 1.6445
1000 : USD 1.426
5000 : USD 1.403

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

TK3R2A10PL MOSFETs Silicon N-channel MOS (U-MOS-H) TK3R2A10PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: Q = 48 nC (typ.) SW (3) Small output charge: Q = 164 nC (typ.) oss (4) Low drain-source on-resistance: R = 2.6 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (6) Enhancement mode: V = 1.5 to 2.5 V (V = 10 V, I = 1 mA) th DS D 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 2018-01 2017-2021 2021-01-27 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TK3R2A10PL 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1) I 100 A c D Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 106 A D Drain current (pulsed) (t = 100 s) (Note 1) I 500 A DP Power dissipation (T = 25 ) P 54 W c D Single-pulse avalanche energy (Note 3) E 278 mJ AS Single-pulse avalanche current (Note 3) I 86 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Isolation voltage (RMS) (t = 1.0 s) V 2000 V ISO(RMS) Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 2.77 /W c th(ch-c) Channel-to-ambient thermal resistance (T = 25 ) R 62.5 a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Limited 100 A by package capability. Note 3: V = 80 V, T = 25 (initial), L = 29 H, I = 86 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2017-2021 2021-01-27 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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