Product Information

TLP109(E(O

TLP109(E(O electronic component of Toshiba

Datasheet
High Speed Optocouplers

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

43: USD 0.7573 ea
Line Total: USD 32.56

0 - Global Stock
MOQ: 43  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

TLP109(E(O
Toshiba

1 : USD 1.7246
10 : USD 1.1189
50 : USD 0.9299
100 : USD 0.8845
250 : USD 0.8618

0 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

TLP109(E(O
Toshiba

1 : USD 1.1181
5 : USD 1.0245
18 : USD 0.8535
47 : USD 0.8073

0 - WHS 3


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 43
Multiples : 20

Stock Image

TLP109(E(O
Toshiba

43 : USD 0.7573
100 : USD 0.59
500 : USD 0.5704
1000 : USD 0.559

0 - WHS 4


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 5
Multiples : 1

Stock Image

TLP109(E(O
Toshiba

5 : USD 5.5804

     
Manufacturer
Product Category
Isolation Voltage
Brand
No. Of Channels
Optocoupler Case Style
No. Of Pins
Forward Current If Max
Ctr Min
Collector Emitter Voltage Vbrceo
Svhc
Input Current
Optocoupler Output Type
Output Voltage
LoadingGif

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TLP109 TOSHIBA Photocoupler GaAAs Ired & PhotoIC TLP109 Programmable Controllers Unit: mm Industrial Inverters 6 5 4 Switching Power Supplies The Toshiba TLP109 mini-flat coupler is a small-outline coupler suitable for surface-mount assembly. The TLP109 consists of a high-output-power GaAAs light emitting diode 1 3 optically coupled to a high-speed photodiode-transistor chip. +0.25 3.7 -0.15 7.0 0.4 The TLP109 is housed in the SO6 package and guarantees a creepage distance of 5.0 mm, a clearance of 5.0 mm and an insulation thickness of 0.4 mm. Therefore, the TLP109 meets the reinforced insulation class requirements of international safety standards. 0.4 0.5 min 1.27 2.54 Isolation voltage: 3750 Vrms (min) Switching speed: t = 0.8 s, t = 0.8 s (max) TOSHIBA 11-4L1 pHL pLH Weight: 0.08 g (Typ.) R = 1.9 k L TTL-compatible UL approved :UL1577, File No.E67349 c-UL approved :CSA Component Acceptance Service No. 5A, File No.E67349 Option (V4) VDE approved : DIN EN60747-5-2 Maximum Operating Insulation Voltage : 707V PK Highest Permissible Over Voltage : 6000V PK (Note) : When a EN60747-5-2 approved type is needed, Please designate Option(V4) Pin Configuration (Top View) Schematic I I F CC V 1 CC 1: ANODE 6 I O 3: CATHODE V O V F 4: EMITTER (GND) 5 5: COLLECTOR (OUTPUT) GND 6: V 3 CC 4 SHIELD Construction Mechanical Ratings Creepage distance: 5.0 mm (min) Clearance: 5.0 mm (min) Insulation thickness: 0.4 mm (min) 1 2010-08-24 +0.25 4.55 -0.15 0.1 2.1 0.1 0.15 TLP109 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current (Note 1) I 20 mA F Pulse forward current (Note 2) I 40 mA FP Peak transient forward current (Note 3) I 1 A FPT Reverse voltage V 5 V R Power dissipation (Note 4) P 40 mW D Output current I 8 mA O Peak output current I 16 mA OP Supply voltage V 0.5 to 30 V CC Output voltage V 0.5 to 20 V O Output power dissipation (Note 5) P 100 mW O Operating temperature range T 55 to 125 opr C Storage temperature range T 55 to 125 stg C Lead solder temperature (10 s) T 260 C sol Isolation Voltage BV 3750 Vrms S (AC,1 min., R.H. 60%) (Note 6) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.36 mA / C above 95C. (Note 2) 50% duty cycle, 1 ms pulse width. Derate 0.72 mA / C above 95C. (Note 3) Pulse width 1 s, 300 pps. (Note 4) Derate 0.72 mA / C above 95C. (Note 5) Derate 1.8 mW / C above 95C. (Note 6) Device considered a twoterminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together. 2 2010-08-24 Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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