TLP172G(TP,F)

TLP172G TOSHIBA Photocoupler Photorelay TLP172G ModemFax Cards, Modems in PC Unit: mm Telecommunications PBX Measurement Equipment The Toshiba TLP172G consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. The TLP172G is suitable for the modem applications which require space savings. 4-pin SOP (2.54SOP4): Height = 2.1 mm, Pitch = 2.54 mm 1-Form-A Peak Off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 110 mA (max) On-state resistance: 35 (max t < 1 s) On-state resistance: 50 (max continuous) Isolation voltage: 1500 Vrms (min) JEDEC UL-recognized: UL 1577, File No.E67349 JEITA cUL-recognized: CSA Component Acceptance Service No.5A TOSHIBA 11-5H1 File No.E67349 Weight: 0.1 g (typ.) VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (top view) 1 4 1: Anode 2: Cathode 3: Drain 4: Drain 2 3 Start of commercial production 2001/12 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP172G Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Reverse voltage V 5 V R LED P 50 mW Diode power dissipation D P /C -0.5 mW/C Diode power dissipation derating (Ta >25C) D Junction temperature T 125 C j Off-state output terminal voltage V 350 V OFF On-state current I 110 mA ON On-state current derating (Ta 25C) I /C 1.1 mA/C ON Detector Output power dissipation P 300 mW C Output power dissipation derating (Ta 25C) P / C 3.0 mW / C C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage BV 1500 Vrms S (AC, 60 s, R.H. 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 280 V DD Forward current I 5 7.5 25 mA F On-state current I 100 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 1.0 1.15 1.3 V F F LED Reverse current I V = 5 V 10 A R R Capacitance C V = 0 V, f = 1 MHz 30 pF T Off-state current I V = 350 V 1 A OFF OFF Detector Capacitance C V = 0 V, f = 1 MHz 30 pF OFF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation