Product Information

TLP187(TPR,E

TLP187(TPR,E electronic component of Toshiba

Datasheet
Transistor Output Optocouplers High VCEO Darlington 300V 150mA 3750Vrms

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.4337 ea
Line Total: USD 1301.1

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

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TLP187(TPR,E
Toshiba

3000 : USD 1.1664
6000 : USD 1.1567
9000 : USD 1.1469
12000 : USD 1.1372
15000 : USD 1.1275
24000 : USD 1.1177
30000 : USD 1.1079
75000 : USD 1.0981
150000 : USD 1.0882

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

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TLP187(TPR,E
Toshiba

3000 : USD 0.4477

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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TLP187(TPR,E
Toshiba

1 : USD 2.8048
10 : USD 0.9741
100 : USD 0.5246
500 : USD 0.4819
1000 : USD 0.4456

     
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TLP187 Photocouplers Infrared LED & Photo Transistor TLP187TLP187TLP187TLP187 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Programmable Logic Controllers (PLCs) I/O Interface Boards Home Electric Appliances 2. 2. 2. 2. GeneralGeneralGeneralGeneral TLP187 is a photocoupler that consist of an infrared LED optically coupled to a darlington transistor. Housed in a SO6 package, it has a high noise immunity and a high insulation. With the high breakdown voltage between the collector and emitter, TLP187 is suitable in applications such as 100 VDC output modules of programmable controllers. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Collector-emitter voltage: 300 V (min) (2) Current transfer ratio: 1000 % (min) (3) Isolation voltage: 3750 Vrms (min) (4) Operation temperature range:-55 to 110 (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). 4. 4. 4. 4. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1: Anode 3: Cathode 4: Emitter 6: Collector 11-4M1S Start of commercial production 2012-10 2015-2019 2019-11-19 1 Toshiba Electronic Devices & Storage Corporation Rev.5.0TLP187 5. 5. 5. 5. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 5.1. 5.1. Mechanical ParametersMechanical Parameters 5.1. 5.1. Mechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. 6. 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 90 ) I /T -1.43 mA/ a F a Input forward current (pulsed) I (Note 1) 1 A FP Input reverse voltage V 5 V R Input power dissipation P 100 mW D Input power dissipation (T 90 ) P /T -2.86 mW/ a D a derating Junction temperature T 125 j Detector Collector-emitter voltage V 300 V CEO Emitter-collector voltage V 0.3 ECO Collector current I 150 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.5 mW/ a C a derating Junction temperature T 125 j Common Operating temperature T -55 to 110 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 200 mW T Isolation voltage AC, 60 s, R.H. 60 % BV (Note 2) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 100 s, f = 1000 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 2015-2019 2019-11-19 2 Toshiba Electronic Devices & Storage Corporation Rev.5.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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