Product Information

TLP192A(TP,F)

TLP192A(TP,F) electronic component of Toshiba

Datasheet
MOSFET Output Optocouplers Photorelay Voff=60V Ion=0.5/0.4A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 1.0657 ea
Line Total: USD 2664.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 2500
Multiples : 2500
2500 : USD 1.2926

     
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RoHS - XON
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TLP192A TOSHIBA Photocoupler Photorelay TLP192A Telecommunications Unit: mm Measurement and Control Equipment Data Acquisition System Measurement Equipment The Toshiba TLP192A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a 6-pin SOP package. This photorelay has higher output current rating than phototransistor-type photocoupler hence, it is suitable for use as On/Off control for high current. 6-pin SOP (2.54SOP6): Height = 2.1 mm, pitch = 2.54 mm Normally open (1-form-A) device Peak off-state voltage: 60 V (min) Trigger LED current: 3 mA (max) On-state current: 400 mA (max) On-state resistance: 2 (max) Isolation voltage: 1500 Vrms (min) UL recognized: UL1557, File No.E67349 JEDEC JEITA Pin Configuration (top view) TOSHIBA 11-7C1 Weight: 0.13 g (typ.) 1 6 1: Anode 2: Cathode 2 5 4: Drain D1 5: Source 6: Drain D2 3 4 Schematic 1 6 2 5 4 1 2007-10-01 TLP192A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating I /C 0.5 mA/C F > (Ta 25C) = LED Peak forward current I 1 A FP (100 s pulse, 100 pps) Reverse voltage V 5 V R Junction temperature T 125 C j Off-state output terminal V 60 V OFF voltage A connection 400 On-state I mA B connection 400 ON current C connection 800 Detector A connection 4.0 Forward current B connection I /C 4.0 mA/C ON derating > (Ta 25C) = C connection 8.0 Junction temperature T 125 C j Storage temperature T 55 to 125 C stg Operating temperature T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage < (AC, 1 min, R.H. 60%) BV 1500 Vrms = S (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol MinTyp.MaxUnit Supply voltage V 48 V DD Forward current I 5 7.5 25 mA F On-state current I 400 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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