Product Information

TLP2261(LF4,E

TLP2261(LF4,E electronic component of Toshiba

Datasheet
High Speed Optocouplers Photo-IC 15Mbps 6V I-Temp
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.313 ea
Line Total: USD 1.31

5257 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

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4772 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 1.313

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RoHS - XON
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Cnhts
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Mxhts
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Additional Infomation About Product

TLP2261 Photocouplers Infrared LED & Photo IC TLP2261TLP2261TLP2261TLP2261 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Factory Networking High-Speed Digital Interfacing for Instrumentation and Control Devices I/O Interface Boards 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2261 consists of a high-output infrared LED coupled with a high-speed photo-diode-transistor chip. It is housed in the SO8L package. It is housed in a thin SO8L package of 2.35 mm (max). The TLP2261 guarantees isolation voltage 5000 Vrms and compliant with international safety standards for reinforced insulation. It has two circuits built into a single SO8L package, which can reduce the mounting area. This photocoupler guarantees operation at up to 125 and on supplies from 2.7 V to 5.5 V. Since TLP2261 guarantees 2 mA low supply current (I /I ), and 1.6 mA (T = 125 ) low threshold input current (I ), DDL DDH a FHL it contributes to energy saving of devices. It can be driven directly from a microcomputer by a low input current. The TLP2261 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 20 kV/s. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Inverter logic type (totem pole output) (2) Package: SO8L (3) Operating temperature: -40 to 125 (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 15 MBd (typ.) (NRZ) (6) Threshold input current: 1.3 mA (max) ( T = 105 ) a : 1.6 mA (max) ( T = 125 ) a (7) Supply current: 2 mA (max) (8) Common-mode transient immunity: 20 kV/s (min) (9) Isolation voltage: 5000 Vrms (min) (10) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Japan Factory Option (D4) Note 1: When a VDE approved type is needed, please designate the Option (D4)Option (D4)Option (D4). Start of commercial production 2016-08 2016-2019 2019-11-21 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TLP2261 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 1 2: Cathode 1 3: Cathode 2 4: Anode 2 5: GND 6: V 2 (Output 2) O 7: V 1 (Output 1) O 8: V DD 11-6B1A 5. 5. 5. 5. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 0.1-F bypass capacitor must be connected between pin 8 and pin 5. 6. 6. Principle of OperationPrinciple of Operation 6. 6. Principle of OperationPrinciple of Operation 6.1. 6.1. 6.1. 6.1. Truth TableTruth TableTruth TableTruth Table Input LED1 (2) M1 (3) M2 (4) Output 1 (2) H ON OFF ON L L OFF ON OFF H 6.2. 6.2. Mechanical ParametersMechanical Parameters 6.2. 6.2. Mechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 8.0 mm Clearance 8.0 Internal isolation thickness 0.4 2016-2019 2019-11-21 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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