Product Information

TLP2270(D4-LF4,E

TLP2270(D4-LF4,E electronic component of Toshiba

Datasheet
High Speed Optocouplers Photocoupler VDE 6V .8mA 25ns 5000Vrms

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

75: USD 1.6968 ea
Line Total: USD 127.26

0 - Global Stock
MOQ: 75  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 75
Multiples : 1
75 : USD 3.3692
100 : USD 3.3408
250 : USD 3.3121
500 : USD 3.2834
1000 : USD 3.2546
2000 : USD 3.2257
2500 : USD 3.1967
3000 : USD 3.1678
5000 : USD 3.1386
10000 : USD 3.1094

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 8.2073
10 : USD 2.2059
75 : USD 1.6881
525 : USD 1.5223
1050 : USD 1.3463

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Data Rate
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Packaging
Number of Channels
Output Type
Isolation Voltage
Vf - Forward Voltage
If - Forward Current
Vr - Reverse Voltage
Pd - Power Dissipation
Output Current
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Hts Code
LoadingGif

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TLP2270 Photocouplers Infrared LED & Photo IC TLP2270TLP2270TLP2270TLP2270 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Factory Networking High-Speed Digital Interfacing for Instrumentation and Control Devices I/O Interface Boards 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2270 consists of a high-output infrared LED coupled with a high-speed photo-diode-transistor chip. It is housed in the SO8L package. It is housed in a thin SO8L package of 2.35 mm (max). The TLP2270 guarantees isolation voltage 5000 Vrms and compliant with international safety standards for reinforced insulation. It has two circuits built into a single SO8L package, which can reduce the mounting area. This photocoupler guarantees operation at up to 125 and on supplies from 2.7 V to 5.5 V. Since TLP2270 guarantees 0.8 mA low supply current (I /I ), and 1 mA (T = 125 ) low threshold input current (I ), DDL DDH a FLH it contributes to energy saving of devices. It can be driven directly from a microcomputer by a low input current. The TLP2270 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 20 kV/s. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Buffer logic type (totem pole output) (2) Package: SO8L (3) Operating temperature: -40 to 125 (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 20 MBd (typ.) (NRZ) (6) Threshold input current: 1 mA (max) (7) Supply current: 0.8 mA (max) (8) Common-mode transient immunity: 20 kV/s (min) (9) Isolation voltage: 5000 Vrms (min) (10) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Japan Factory Option (D4) Note 1: When a VDE approved type is needed, please designate the Option (D4)Option (D4)Option (D4). Start of commercial production 2016-10 2016-2019 2019-11-26 1 Toshiba Electronic Devices & Storage Corporation Rev.5.0TLP2270 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 1 2: Cathode 1 3: Cathode 2 4: Anode 2 5: GND 6: V 2 (output 2) O 7: V 1 (output 1) O 8: V DD 11-6B1A 5. 5. 5. 5. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 0.1-F bypass capacitor must be connected between pin 8 and pin 5. 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. 6.1. 6.1. Truth TableTruth TableTruth TableTruth Table Input LED1 (2) M1 (3) M2 (4) Output 1 (2) H ON ON OFF H L OFF OFF ON L 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 8.0 mm Clearance 8.0 Internal isolation thickness 0.4 2016-2019 2019-11-26 2 Toshiba Electronic Devices & Storage Corporation Rev.5.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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