Product Information

TLP293-4

TLP293-4 electronic component of Toshiba

Datasheet
OPTOCOUPLER, PHOTOTRANS, 3.75KV, SOIC-16

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1788 ea
Line Total: USD 3.18

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

TLP293-4
Toshiba

1 : USD 2.3863
10 : USD 1.668
25 : USD 1.4285
50 : USD 1.2954
100 : USD 1.1623
500 : USD 1.092

     
Manufacturer
Product Category
Isolation Voltage
Brand
No. Of Channels
Optocoupler Case Style
No. Of Pins
Forward Current If Max
Ctr Min
Collector Emitter Voltage Vbrceo
Product Range
Svhc
LoadingGif

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TLP293-4 TOSHIBA PHOTOCOUPLER InGaAs IRED & PHOTO-TRANSISTOR TLP293-4 Programmable Controllers Switching Power Supplies Simplex/Multiplex Data Transmissions Unit: mm TLP293-4 consists of phototransistors optically coupled to InGaAs infrared emitting diodes. TLP293-4 photocoupler is housed in the very small and thin SO16 package. Since the TLP293-4 is guaranteed wide operating temperature range (Ta=- 55 to 125 C), and high isolation voltage (3750 Vrms), it is suitable for high- density surface mount applications such as programmable controllers. Collector-Emitter Voltage : 80 V (min) Current Transfer Ratio : 50% (min) GB rank: 100% (min) Isolation Voltage : 3750 Vrms (min) TOSHIBA 11-11F1 Weight: 0.19 g (typ.) Operation temperature range: -55 to 125 C Safety standards UL-approved: UL1577, File No. E67349 cUL-approved: CSA Component Acceptance Service No.5A, Pin Configuration File No. E67349 CQC- approved : GB4943.1, GB8898 TLP293-4 2000 m 1 16 VDE-approved : EN60747-5-5 (Note) 2 15 Note : When an EN60747-5-5 approved type is needed, please designate the Option (V4). 14 3 4 13 Construction Mechanical Rating 12 5 Creepage Distance 5.0 mm (min) Clearance 5.0 mm (min) 11 6 Internal isolation thickness 0.4 mm (min) 7 10 8 9 1,3,5,7 : Anode 2,4,6,8 : Cathode 9,11,13,15 : Emitter 10,12,14,16 : Collector Start of commercial production 2014-04 1 2015-10-21 TLP293-4 Current Transfer Ratio (Unless otherwise specified, Ta=25C) Current Transfer Ratio (%) Rank Test condition Marking of Classification I / I C F (Note 1) Min Max Blank 50 600 Blank IF = 5 mA, VCE = 5 V GB 100 600 GB LA (Note2) 50 600 LA IF = 0.5 mA, VCE = 5 V LGB (Note2) 100 600 LB Note1: Specify both the part number and a rank in this format when ordering. Example: rank GB: TLP293-4(GB,E For safety standard certification, however, specify the part number alone. TLP293 4 (GB,E: TLP293-4 Note2: The LA and LGB rank are made CTR rank of the low input current condition. 2 2015-10-21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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