Product Information

TLP3061(S)

TLP3061(S) electronic component of Toshiba

Datasheet
OPTOCOUPLER, TRIAC, 5KV, DIP-5

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.65 ea
Line Total: USD 3.25

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1

Stock Image

TLP3061(S)
Toshiba

5 : USD 0.65
25 : USD 0.65
100 : USD 0.65
250 : USD 0.65
500 : USD 0.65
1000 : USD 0.65

     
Manufacturer
Product Category
Isolation Voltage
Brand
Optocoupler Case Style
No. Of Pins
Triac Operating Mode
Peak Repetitive Off-State Voltage Vdrm
Product Range
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TLP3061(S),TLP3062(S),TLP3063(S) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP3061(S),TLP3062(S),TLP3063(S) Unit: mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY The TOSHIBA TLP3061 (S), TLP3062 (S), TLP3063 (S) consist of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. Peak Off-State Voltage : 600 V (min) Trigger LED Current : 15 mA (max) (TLP3061(S)) 10 mA (max) (TLP3062(S)) 5 mA (max) (TLP3063(S)) On-State Current : 100 mA (max) JEDEC Isolation Voltage : 5000 Vrms (min) JEITA UL Recognized : UL1577, File No. E67349 TOSHIBA 11-7A9 SEMKO Approved : SS EN60065 weight: 0.39g (typ.) SS EN60950, File No.9841113 BSI Approved : BS EN60065, File No.8385 BS EN60950, File No.8386 Option (D4) type Pin Configuration (top view) VDE approved: DIN EN60747-5-2 Approved No. 40009302 1 6 Maximum operating insulation voltage: 890VPK Highest permissible over voltage: 8000VPK 2 (Note):When a EN60747-5-2 approved type is needed, ZC 4 3 please designate theOption (D4 Construction mechanical rating 1: Anode 7.62 mm pich 10.16 mm pich 2: Cathode Standard Type TLPxxxxF type 3: N.C. Creepage Distance 7.0 mm (Min) 8.0 mm (Min) 4:Terminal 1 Clearance 7.0 mm (Min) 8.0 mm (Min) 6:Terminal 2 Insulation Thickness 0.5 mm (Min) 0.5 mm (Min) ZC:Zero-cross Circuit 1 2010-10-01 TLP3061(S),TLP3062(S),TLP3063(S) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 53C) I / C 0.7 mA / C F Peak forward current I 1 A FP (100 s pulse, 100 pps) Power dissipation P 100 mW D Power dissipation derating (Ta 25C) P / C 1.0 mW / C D Reverse voltage V 5 V R Junction temperature T 125 C j Offstate output terminal voltage V 600 V DRM Ta = 25C 100 Onstate RMS current I mA T(RMS) Ta = 70C 50 Onstate current derating (Ta 25C) I / C 1.1 mA / C T Peak onstate current I 2 A TP (100 s pulse, 120 pps) Peak nonrepetitive surge I 1.2 A TSM current (P = 10 ms) w Power dissipation P 300 mW D Power dissipation derating (Ta 25C) P / C 4.0 mW / C D Junction temperature T 115 C j Storage temperature range T 55 to 150 C stg Operating temperature range T 40 to 100 C opr Lead soldering temperature (10 s) T 260 C sol Total package power dissipation P 330 mW T Total package power dissipation derating P / C 4.4 mW / C T (Ta 25C) Isolation voltage BV 5000 Vrms S (AC, 1 min., R.H. 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min.Typ.Max.Unit Supply voltage V 240 Vac AC Forward current I* 15 20 25 mA F Peak onstate current I 1 A TP Operating temperature T 25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. In the case of TLP3062 2 2010-10-01 LED Detector

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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