TLP3440S Photocouplers Photorelay TLP3440STLP3440STLP3440STLP3440S 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Measuring Instruments High-Speed Logic IC Testers High-Speed Memory Testers ATE (Automatic Test Equipment) 2. 2. 2. 2. GeneralGeneralGeneralGeneral The TLP3440S photorelay consists of a photo MOSFET optically coupled to an infrared LED. It is housed in a S- VSON4T package. The TLP3440S features low output capacitance of C , thus it is suitable for high frequency OFF signal applications. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Normally opened (1-Form-A) (2) OFF-state output terminal voltage: 40 V (min) (3) Trigger LED current: 3 mA (max) (4) ON-state current: 120 mA (max) (5) ON-state resistance: 11 (typ.), 14 (max) (6) Output capacitance: 0.45 pF(typ.), 0.8 pF(max) (7) Isolation voltage: 500 Vrms (min) 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 2: Cathode 3: Drain 4: Drain 11-2E2 5. 5. 5. 5. Internal CircuitInternal CircuitInternal CircuitInternal Circuit Start of commercial production 2017-09 2017-2020 2020-02-20 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TLP3440S 6. 6. 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit LED Input forward current I 30 mA F Input forward current derating (T 25 ) I /T -0.3 mA/ a F a Input reverse voltage V 6 V R Input power dissipation P 50 mW D Input power dissipation derating (T 25 ) P /T -0.5 mW/ a D a Junction temperature T 125 j Detector OFF-state output terminal voltage V 40 V OFF ON-state current I 120 mA ON ON-state current derating (T 25 ) I /T -1.2 mA/ a ON a ON-state current (pulsed) (t = 100 ms, Duty = 1/10) I 360 mA ONP Output power dissipation P 240 mW O Output power dissipation derating (T 25 ) P /T -2.4 mW/ a O a Junction temperature T 125 j Common Storage temperature T -40 to 125 stg Operating temperature T -40 to 110 opr Lead soldering temperature (10 s) T 260 sol Isolation voltage AC, 60 s, R.H. 60 % BV (Note 1) 500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. Note: This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on. 7. 7. Recommended Operating Conditions (Note)Recommended Operating Conditions (Note) 7. 7. Recommended Operating Conditions (Note)Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Supply voltage V 32 V DD Input forward current I 5 7.5 20 mA F ON-state current I 120 mA ON Operating temperature T -20 85 opr Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. 2017-2020 2020-02-20 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0