Product Information

TLP4227G-2(F)

TLP4227G-2(F) electronic component of Toshiba

Datasheet
MOSFET Output Optocouplers Photorelay Voff=350V Ion=0.15/0.12A dual

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

15: USD 2.4581 ea
Line Total: USD 36.87

82 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 15  Multiples: 1
Pack Size: 1
Availability Price Quantity
71 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 25
Multiples : 1
25 : USD 3.5536

82 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 15
Multiples : 1
15 : USD 2.4581
50 : USD 2.2816

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Isolation Voltage
Forward Current
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
Output Type
If - Forward Current
Vf - Forward Voltage
Vr - Reverse Voltage
Package / Case
Brand
Maximum Forward Diode Voltage
Maximum Input Diode Current
Maximum Reverse Diode Voltage
Number Of Channels Per Chip
Factory Pack Quantity :
Height
Length
Width
Mounting Style
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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TLP4227G,TLP4227G-2 TOSHIBA Photocoupler Photorelay TLP4227G, TLP4227G-2 PBX Unit: mm Telecommunication ModemFAX Cards, Modems In PC Measurement Instrumentation The TOSHIBA TLP4227G series consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a plastic DIP package. The TLP4227G series are a bi-directional switch, which can replace mechanical relays in many applications. TLP4227G: 4 pin DIP (DIP4), 1 channel type (1 form B) TLP4227G-2: 8 pin DIP (DIP8), 2 channel type (2 form B) Peak off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 150 mA (max) JEDEC On-state resistance: 25 (max) Isolation voltage: 2500 Vrms (min) JEITA UL recognized: UL1577 File No. E67349 TOSHIBA 11-5B2 Weight: 0.26 g (typ.) Pin Configuration (top view) TLP4227G TLP4227G-2 1 4 1 8 2 3 2 7 1: ANODE 2: CATHODE 3 6 3: DRAIN 4: DRAIN JEDEC JEITA 4 5 TOSHIBA 11-10C4 1, 3 : ANODE Weight: 0.54 g (typ.) 2, 4 : CATHODE 5 : DRAIN D1 6 : DRAIN D2 7 : DRAIN D3 8 : DRAIN D4 1 2007-10-01 TLP4227G,TLP4227G-2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F > Forward current derating (Ta 25C) I /C 0.5 mA/C = F Peak forward current (100 s pulse, 100 pps) I 1 A FP Reverse voltage V 5 V R Junction temperature T 125 C j Off-state output terminal voltage V 350 V OFF TLP4227G One channel On-state current I 150 mA ON TLP4227G-2 Both channel (Note 1) TLP4227G On-state current One channel derating I /C 1.5 mA/C ON > TLP4227G-2 Both channel (Ta 25C) = (Note 1) Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol < Isolation voltage (AC, 1 min, R.H.60%) (Note 2) BV 2500 Vrms = S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Two channels operating simultaneously. Note 2: Device considered a two-terminal device: LED side pins shorted together, and DETECTOR side pins shorted together. Recommended Operating Conditions Characteristics Symbol MinTyp.MaxUnit Supply voltage V 280 V DD Forward current I 5 25 mA F On-state current I 150 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Forward voltage V I = 10 mA 1.0 1.15 1.3 V F F Reverse current I V = 5 V 10 A R R Capacitance C V = 0, f = 1 MHz 30 pF T Off-state current I V = 350 V 1 A OFF OFF Capacitance C V = 0, f = 1 MHz, I = 5 mA 65 pF OFF F 2 2007-10-01 Detec- LED Detector LED tor

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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