TLP504A,TLP504A-2 TOSHIBA Photocoupler IRED & Photo-Transistor TLP504A, TLP504A-2 Programmable Controllers Unit: mm AC/DC-Input Module Solid State Relay The TOSHIBA TLP504A and TLP504A-2 consists of a photo- transistor optically coupled to an infrared emitting diode. The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A-2 provides four isolated channels in a sixteen plastic DIP package. Collector-emitter voltage: 55 V (min) Current transfer ratio: 50% (min) Rank GB: 100% (min) Isolation voltage: 2500 Vrms (min) UL-recognized: UL 1577, File No.E67349 , TOSHIBA 11-10C4 Weight: 0.54 g (typ.) Pin Configurations (top view) TLP504A TLP504A-2 1 8 1 16 2 7 2 15 3 3 14 6 4 5 4 13 1, 4 : Anode 5 12 2, 3 : Cathode 5, 8 : Emitter 6 11 6, 7 : Collector 7 10 TOSHIBA 11-20A3 Weight: 1.1 g (typ.) 8 9 1, 4, 5, 8 : Anode 2, 3, 6, 7 : Cathode 9, 12, 13, 16 : Emitter 10, 11, 14, 15 : Collector Start of commercial production 1981-01 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP504A,TLP504A-2 Absolute Maximum Ratings (Ta = 25C) Rating Characteristics Symbol Unit TLP504A TLP504A-2 Forward current I 60 50 mA F Forward current derating I /C -0.7 (Ta 39C) -0.5 (Ta 25C) mA/C F Pulse forward current I 1 A FP (100s pulse, 100pps) Reverse voltage V 5 V R P 100 mW Diode power dissipation D P /C -1.2 (Ta 39C) -1.0 (Ta 25C) mW/C Diode power dissipation derating D Junction temperature T 125 C j Collector-emitter voltage V 55 V CEO Emitter-collector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation P 150 100 mW C (1 circuit) Collector power dissipation P /C -1.5 -1.0 mW/C C derating (1 circuit) (Ta 25C) Junction temperature T 125 C j Storage temperature range T -55 to 150 C stg Operating temperature range T -55 to 100 C opr Lead soldering temperature (10 s) T 260 C sol Total package power dissipation R 250 150 mW T Total package power dissipation P /C -2.5 -1.5 mW/C T derating (Ta 25C) Isolation voltage BV 2500 Vrms S (AC, 60 s, R.H. 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristicss Symbol Min. Typ. Max. Unit Supply voltage V 5 24 V CC Forward current I 16 20 mA F Collector current I 1 10 mA C Operating temperature T -25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED