Product Information

TPC8092,LQ(S

TPC8092,LQ(S electronic component of Toshiba

Datasheet
Toshiba MOSFET N-Ch 30V FET 15A 1.9W 1800pF
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500

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TPC8092,LQ(S
Toshiba

2500 : USD 0.3375
10000 : USD 0.3362
25000 : USD 0.3235
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
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Additional Infomation About Product

TPC8092 MOSFETs Silicon N-Channel MOS (U-MOS) TPC8092TPC8092TPC8092TPC8092 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: R = 7.6 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS (4) Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.2 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 15 A D Drain current (pulsed) (Note 1) I 60 DP Power dissipation (t = 10 s) (Note 2) P 1.9 W D Power dissipation (t = 10 s) (Note 3) P 1.0 W D Single-pulse avalanche energy (Note 4) E 70 mJ AS Avalanche current I 15 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2010-10 2014-02-14 1 Rev.2.0TPC8092 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (t = 10 s) (Note 2) R 65.7 /W th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 125 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: V = 24 V, T = 25 (initial), L = 0.24 mH, R = 1.2 , I = 15 A DD ch G AR Fig. Fig. 5.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. 5.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. 5.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. 5.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a) Board (b)Board (b) Board (a)Board (a) Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-14 2 Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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