Product Information

TPC8128

TPC8128 electronic component of Toshiba

Datasheet
MOSFET, P CH, 30V, 16A, SOP8

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5697 ea
Line Total: USD 1.57

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

TPC8128
Toshiba

1 : USD 1.5697
25 : USD 0.9746
100 : USD 0.8436
250 : USD 0.8354
500 : USD 0.8083
2000 : USD 0.7928

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8128 Lithium Ion Battery Applications Unit: mm Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: R = 3.9 m (typ.) DS (ON) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement mode: V = 0.8 to 2.0 V (V = 10 V, I = 0.5mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Drain-gate voltage (R = 20 k) V 30 V GS DGR Gate-source voltage V 25/+20 V GSS DC (Note 1) I 16 D Drain current A Pulse (Note 1) I 64 DP Drain power dissipation (t = 10 s) P 1.9 W D (Note 2a) JEDEC Drain power dissipation (t = 10 s) P 1.0 W D JEITA (Note 2b) Single pulse avalanche energy TOSHIBA 2-6J1B E 166 mJ AS (Note 3) Weight: 0.080 g (typ.) Avalanche current (Note 1) I 16 A AR Channel temperature T 150 C ch Circuit Configuration Storage temperature range T 55 to 150 C stg 8 6 7 5 Note 1, Note 2, Note 3 : See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 1 2 3 4 Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-11-20 TPC8128 Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to ambient R 65.8 C/W th (ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 125 C/W th (ch-a) (t = 10 s) (Note 2b) Marking (Note 4) Part No. (or abbreviation code) TPC8128 Lot No. Note 5 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a)Device mounted on a glass-epoxy board (a) (b)Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25 C (initial), L = 500 H, R = 25 , I = 16 A DD ch G AR Note 4: on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) Note 5: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-11-20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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