Product Information

TPCA8053-H

TPCA8053-H electronic component of Toshiba

Datasheet
MOSFET, N CH, 60V, 15A, SOP8

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6636 ea
Line Total: USD 1.66

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

TPCA8053-H
Toshiba

1 : USD 1.6636
25 : USD 1.3923
100 : USD 1.2449
250 : USD 1.1384
500 : USD 1.0319
2000 : USD 0.9664

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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TPCA8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCA8053-H Switching Regulator Applications Unit: mm Motor Drive Applications 0.4 0.1 1.27 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge: Q = 6.9 nC (typ.) 1 SW A Low drain-source ON-resistance: R = 13.9 m (typ.) DS (ON) High forward transfer admittance: Y = 46 S (typ.) fs 5.0 0.2 Low leakage current: I = 10 A (max) (V = 60 V) DSS DS Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.2 mA) th DS D 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 4.25 0.2 Drain-source voltage V 60 V DSS Drain-gate voltage (R = 20 k) V 60 V DGR GS 8 5 Gate-source voltage V 20 V GSS DC (Note 1) I 15 D 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) I 45 DP JEDEC Drain power dissipation (Tc = 25 ) P 30 W D Drain power dissipation (t = 10 s) JEITA P 2.8 W D (Note 2a) TOSHIBA 2-5Q1A Drain power dissipation (t = 10 s) P 1.6 W D (Note 2b) Weight: 0.069 g (typ.) Single-pulse avalanche energy E 16 mJ AS (Note 3) Avalanche current I 15 A Circuit Configuration AR Repetitive avalanche energy E 1.53 mJ AR 8 6 7 5 (Tc = 25) (Note 4) T 150 C Channel temperature ch Storage temperature range T 55 to 150 C stg Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 1 2 3 4 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-08-19 6.0 0.3 0.95 0.05 0.6 0.1 5.0 0.2 0.166 0.05 0.8 0.1 3.5 0.2 1.1 0.2TPCA8053-H Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 4.17 C/W th (ch-c) (Tc = 25) Thermal resistance, channel to ambient R 44.6 C/W th (ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 78.1 C/W th (ch-a) (t = 10 s) (Note 2b) Marking (Note 5) TPCA Part number 8053-H Lot No. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25C (initial), L = 100 H, R = 25 , I = 15 A DD ch G AR Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2009-08-19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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