TPCA8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8128 Lithium Ion Battery Applications Unit: mm Power Management Switch Applications 0.4 0.1 1.27 8 0.05 M A 5 Small footprint due to compact and slim package Low drain-source ON resistance : R = 3.7 m (typ.) DS (ON) 0.15 0.05 Low leakage current : I = 10 A (max) (V = 30 V) DSS DS Enhancement mode 4 0.595 : V = 0.8 to 2.0 V (V = 10 V, I = 0.5 m A ) th DS D 1 A 5.0 0.2 0.05 S Absolute Maximum Ratings (Ta = 25C) S 4 1 Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS 4.25 0.2 Drain-gate voltage (R = 20 k) V 30 V GS DGR Gate-source voltage V 25/+20 V GSS 8 5 DC (Note 1) I 34 D Drain current A Pulse (Note 1) I 102 DP Drain power dissipation (Tc = 25C) P 45 D 1, 2, 3: Source 4: Gate Drain power dissipation (t = 10 s) 5, 6, 7, 8: Drain P 2.8 D (Note 2a) W JEDEC Drain power dissipation (t = 10 s) P 1.6 D (Note 2b) JEITA Single pulse avalanche energy E 150 mJ AS (Note 3) TOSHIBA 2-5Q1A Avalanche current I 34 A AR Weight: 0.076 g (typ.) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Circuit Configuration 8 6 7 5 Note: For (Note 1), (Note 2), (Note 3), refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor 1 2 3 4 Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with caution. 1 2010-01-07 6.0 0.3 0.95 0.05 0.6 0.1 5.0 0.2 0.166 0.05 0.8 0.1 3.5 0.2 1.1 0.2TPCA8128 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case (Tc = 25 ) R 2.78 C/W th (ch-c) Thermal resistance, channel to ambient R 44.6 th (ch-a) (t = 10 s) (Note 2a) C/W Thermal resistance, channel to ambient R 78.1 th (ch-a) (t = 10 s) (Note 2b) Marking (Note 4) TPCA T ype 8128 Lot No. Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25C (initial), L = 100 H, R = 25 , I = 34 A DD ch G AR Note 4: Weekly code: (Three digits) Week of manufacture (01 for first week of a year, continues up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2010-01-07