TPH2R306NH,L1Q(M Toshiba

TPH2R306NH,L1Q(M electronic component of Toshiba
TPH2R306NH,L1Q(M Toshiba
TPH2R306NH,L1Q(M MOSFETs
TPH2R306NH,L1Q(M  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of TPH2R306NH,L1Q(M MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPH2R306NH,L1Q(M MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TPH2R306NH,L1Q(M
Manufacturer: Toshiba
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A
Datasheet: TPH2R306NH,L1Q(M Datasheet (PDF)
Price (USD)
1: USD 5.4235 ea
Line Total: USD 5.42 
Availability : 0
  
QtyUnit Price
1$ 5.4235
3$ 2.3259
21$ 1.4843

Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 5000
QtyUnit Price
1$ 5.4235
3$ 2.3259
21$ 1.4843

   
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TPH2R306NH,L1Q(M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPH2R306NH,L1Q(M and other electronic components in the MOSFETs category and beyond.

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The TPH2R306NH,L1Q(M is a N-MOSFET transistor manufactured by Toshiba. It is a unipolar transistor with a maximum drain-source voltage of 60V, a maximum drain current of 130A, a maximum power dissipation of 78W, and a package of SOP8A. It is designed for various applications such as automotive, power control, and power supply.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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