Product Information

TPH6R30ANL,L1Q(M

Name: TPH6R30ANL,L1Q(M
Brand: Toshiba
SKU: TPH6R30ANLL1QM_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

TPH6R30ANL,L1Q(M electronic component of Toshiba

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See Product Specifications
Datasheet

Transistor: N-MOSFET; unipolar; 100V; 45A; 54W; SOP8A

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.5014 ea
Line Total: USD 3.5

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 27 May to Fri. 31 May MOQ : 1 Multiples : 5000 TPH6R30ANL,L1Q(M Toshiba	1 : USD 3.5014 5 : USD 1.5053 33 : USD 0.9719

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Additional Infomation About Product

The TPH6R30ANL,L1Q(M is a Transistor N-MOSFET manufactured by Toshiba. It is a unipolar device with a supply voltage rating of up to 100V and a continuous drain current rating of up to 45A. The package type is a SOP8A plastic encapsulated device with a power dissipation rating of up to 54W.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Kind Of Package REEL , TAPE REEL , TAPE
Mounting Smd Smd
Case Sop8a Sop8a
Polarisation Unipolar Unipolar
Features Of Semiconductor Devices Esd Protected Gate Esd Protected Gate
Type Of Transistor N - Mosfet N - Mosfet
Drain-Source Voltage 100 V 100 V
Drain Current 45 A 45 A
Gate-Source Voltage 20 V 20 V
Gate Charge 55 nC 55 nC
On-State Resistance 10.3 mOhms 10.3 mOhms
Power Dissipation 54 W 54 W