TPN4R203NC MOSFETs Silicon N-channel MOS (U-MOS) TPN4R203NCTPN4R203NCTPN4R203NCTPN4R203NC 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Lithium-Ion Secondary Batteries Power Management Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Small, thin package (2) Low drain-source on-resistance: R = 3.5 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS (4) Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.2 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance Start of commercial production 2012-08 2019 2019-10-30 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TPN4R203NC 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 53 A D Drain current (DC) (Note 1) I 23 D Drain current (pulsed) (1 ms) (Note 1) I 146 DP Power dissipation (T = 25) P 22 W c D Power dissipation (t = 10 s) (Note 3) P 1.9 D Power dissipation (t = 10 s) (Note 4) P 0.7 D Single-pulse avalanche energy (Note 5) E 62 mJ AS Avalanche current I 23 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25) R 5.68 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 65.7 th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 178 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Package limit is 45 A. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 24 V, T = 25 (initial), L = 0.091 mH, I = 23 A DD ch AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2019 2019-10-30 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0