Product Information

TPW4R50ANH,L1Q

TPW4R50ANH,L1Q electronic component of Toshiba

Datasheet
N-Channel 100 V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.7995 ea
Line Total: USD 5.8

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 5000
Multiples : 5000
5000 : USD 2.1001
10000 : USD 2.0791
15000 : USD 2.0583
20000 : USD 2.0377
25000 : USD 2.0174
30000 : USD 1.9971
40000 : USD 1.9773
50000 : USD 1.9573
100000 : USD 1.9379

0 - WHS 2


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 5000
Multiples : 5000
5000 : USD 1.5396

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Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 3.5
10 : USD 3.0132
100 : USD 2.4217
500 : USD 1.9897
1000 : USD 1.6486
2000 : USD 1.5349

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Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 3.5
10 : USD 3.0132
100 : USD 2.4217
500 : USD 1.9897
1000 : USD 1.6486
2000 : USD 1.5349

0 - WHS 5


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 5.7995
10 : USD 2.0919
25 : USD 1.9987
100 : USD 1.7295
250 : USD 1.6777
500 : USD 1.4602
1000 : USD 1.2427
2500 : USD 1.1806

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

TPW4R50ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPW4R50ANHTPW4R50ANHTPW4R50ANHTPW4R50ANH 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications DC-DC Converters Switching Voltage Regulators Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High-speed switching (2) Small gate charge: Q = 22 nC (typ.) SW (3) Low drain-source on-resistance: R = 3.7 m (typ.) (V = 10 V) DS(ON) GS (4) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (5) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain DSOP Advance Start of commercial production 2014-09 2015-2019 2019-10-21 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0TPW4R50ANH 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1), (Note 2) I 92 A c D (Bottom drain) Drain current (pulsed) (t = 100 s) (Note 1) I 400 A DP Power dissipation (T = 25 ) P 142 W c D (Bottom drain) Power dissipation (Note 3) P 2.5 W D Power dissipation (Note 4) P 0.8 W D Single-pulse avalanche energy (Note 5) E 125 mJ AS Single-pulse avalanche current (Note 5) I 92 A AS Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Bottom drain R 0.88 /W th(ch-c) (T = 25 ) c Channel-to-case thermal resistance Top source R 0.93 /W th(ch-c) (T = 25 ) c Channel-to-ambient thermal resistance (T = 25 ) (Note 3) R 50 /W a th(ch-a) Channel-to-ambient thermal resistance (T = 25 ) (Note 4) R 156 /W a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 60 V, T = 25 (initial), L = 16 H, I = 92 A DD ch AS Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2015-2019 2019-10-21 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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