TSM2308 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate V (V) R (m) I (A) DS DS(on) D 2. Source 3. Drain 156 V = 10V 3 GS 60 192 V = 4.5V 2.1 GS Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Power System Load Switch Ordering Information Part No. Package Packing TSM2308CX RFG SOT-23 3Kpcs / 7 Reel N-Channel MOSFET Note: G denotes Halogen Free Product. o Absolute Maximum Rating (T =25 C unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 3 A D Pulsed Drain Current I 6 A DM a,b Continuous Source Current (Diode Conduction) I 3 A S o T =25 C 1.25 A Maximum Power Dissipation P W D o T =75 C 0.8 A Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance R 80 C/W JC Junction to Ambient Thermal Resistance (PCB mounted) R 150 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad of 2oz Cu, t 5 sec. Document Number: DS P0000049 1 Version: C15 TSM2308 60V N-Channel MOSFET o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 60 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1.2 -- 2.5 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 48V, V = 0V I -- -- 1.0 A DS GS DSS V = 10V, I = 3A -- 130 156 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 2A -- 160 192 GS D Diode Forward Voltage I = 1A, V = 0V V -- -- -1.2 V S GS SD b Dynamic Total Gate Charge Q -- 3.99 -- g V = 48V, I = 3A, DS D Gate-Source Charge Q -- 1.31 -- nC gs V = 4.5V GS Gate-Drain Charge Q -- 1.78 -- gd Input Capacitance C -- 511 -- iss V = 15V, V = 0V, DS GS pF Output Capacitance C -- 38 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 25 -- rss b.c Switching Turn-On Delay Time t -- 5.3 -- d(on) Turn-On Rise Time V = 30V, I = 3A, V t -- 17.5 -- DD D GEN r nS Turn-Off Delay Time = 10V, R = 3.3 t -- 14.2 -- G d(off) Turn-Off Fall Time t -- 2.4 -- f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Document Number: DS P0000049 2 Version: C15