Product Information

TSF10N60M

TSF10N60M electronic component of Truesemi

Datasheet
MOSFET N Trench 600V 10A (Tc) 5V @ 250uA 800 mΩ @ 5A,10V TO-220F RoHS
Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7329 ea
Line Total: USD 0.73

1492 - Global Stock
Ships to you between
Wed. 15 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
975 - WHS 1


Ships to you between
Wed. 15 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

TSF10N60M
Truesemi

1 : USD 0.6144
10 : USD 0.5037
50 : USD 0.4109
100 : USD 0.3506
500 : USD 0.3244
1000 : USD 0.3082

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The TSF10N60M is a MOSFET N-channel Trench 600V 10A (Tc) 5V @ 250uA 800 mΩ @ 5A,10V TO-220F RoHS component that is manufactured by Truesemi. This component is designed to provide low on-resistance with fast switching speeds, offering high performance and efficiency. Its low gate charge and low output capacitance make it an excellent choice for applications such as DC-DC converters, Class D audio amplifiers, and a variety of switch mode power supplies. Its built-in EMI noise filter makes it an ideal choice for automotive applications. This component is RoHS compliant, and its TO-220F form factor means it is designed for surface-mount and through-hole mounting.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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