Product Information

TSF8N65M

TSF8N65M electronic component of Truesemi

Datasheet
MOSFET N Trench 650V 7.5A (Tc) 5V @ 250uA 1.5 Ω @ 3.75A,10V TO-220F RoHS

Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3415 ea
Line Total: USD 0.34

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

TSF8N65M
Truesemi

1 : USD 0.3524
10 : USD 0.3136
50 : USD 0.3073
100 : USD 0.2664

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The TSF8N65M is a power Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) from TrueSemi with N-Type Trench technology. This device has a 650V VDSS rating with a maximum Id of 7.5A. Its capacitance is 5V @ 250uA, and the on-resistance a low 1.5Ω @ 3.75A. This component is available in an industry-standard TO-220F footprint and is compliant with Restriction of Hazardous Substances (RoHS) requirements.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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