Product Information

D2229UK

D2229UK electronic component of TT Electronics

Datasheet
RF MOSFET Transistors Silicon DMOS RF FET 2.5W-12.5V-1GHz SE
Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 44.2626 ea
Line Total: USD 4426.26

0 - Global Stock
MOQ: 100  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 100
Multiples : 50

Stock Image

D2229UK
TT Electronics

100 : USD 44.2626

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2
Multiples : 1

Stock Image

D2229UK
TT Electronics

2 : USD 50.5751

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Operating Frequency
Mounting Style
Application
Drain Efficiency Typ
Screening Level
Number Of Elements
Drain Source Voltage Max
Rad Hardened
Frequency Min
Operating Temp Range
Pin Count
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Additional Infomation About Product

TetraFET D2229UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED Dimensions in mm. MULTI-PURPOSE SILICON 2.313 DMOS RF FET 5.50 0.15 0.2 0.3 R. 1.27 0.05 4 PL. 2 PL. 2 PL. 2.5W 12.5V 1GHz 0.47 1.65 2 PL. 4 5 1.27 SINGLE ENDED 3 6 3.00 2.07 6.50 0.360 0.381 1.27 2 PL. 2 PL. 0.15 0.005 2 7 1.27 1 8 0.10 R. TYP. 0.47 FEATURES 2 PL. 0.80 0.10 0.508 4 PL. 0.10 TYP. SIMPLIFIED AMPLIFIER DESIGN TYP. 4.90 0.15 SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW C rss F-0127 PACKAGE PIN 1 SOURCE PIN 5 SOURCE SIMPLE BIAS CIRCUITS PIN 2 DRAIN PIN 6 GATE PIN 3 DRAIN PIN 7 GATE LOW NOISE PIN 4 SOURCE PIN 8 SOURCE HIGH GAIN 10 dB MINIMUM Ceramic Material: Alumina. Parts can also be supplied with AlN or BeO for APPLICATIONS improved thermal resistance. Contact Semelab for details. HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 17.5W D BV Drain Source Breakdown Voltage 40V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current 2A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Prelim. 2/99 E-mail: sales@semelab.co.uk Website D2229UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit DrainSource BV V = 0 I = 10mA 40 V DSS GS D Breakdown Voltage Zero Gate Voltage I V = 12.5V V = 0 1 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 mA GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 0.5 7 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 0.2A 0.18 S fs DS D G Common Source Power Gain P = 2.5W 10 dB PS O h Drain Efficiency V = 12.5V I = 0.1A 40 % DS DQ VSWR Load Mismatch Tolerance f = 1GHz 20:1 C Input Capacitance V = 0V V = 5V f = 1MHz 12 pF iss DS GS C Output Capacitance V = 12.5V V = 0 f = 1MHz 10 pF oss DS GS C Reverse Transfer Capacitance V = 12.5V V = 0 f = 1MHz 1 pF rss DS GS * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% THERMAL DATA R Thermal Resistance Junction Case Max. 10C / W THjcase Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Prelim. 2/99 E-mail: sales@semelab.co.uk Website

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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TT Electronics - IoT Solutions
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TT ElectronicsBI
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Welwyn Components TT Electronics
Welwyn Components / TT Electronics

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