Document Number: MHT1002N Freescale Semiconductor Rev. 0, 4/2015 Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs MHT1002NR3 These 350 W CW RF power transistors are designed for consumer and MHT1002GNR3 commercial cooking applications operating in the 915 MHz ISM band. Typical Performance: V =48 Vdc, I = 100 mA DD DQ(A+B) Frequency G PAE P ps out (MHz) Signal Type (dB) (%) (W) 915 MHz, 350 W CW, 48 V 902 CW 20.1 64.1 359 RF POWER LDMOS TRANSISTOR 915 20.7 66.9 355 FORCONSUMERAND COMMERCIAL COOKING 928 20.1 68.1 361 Load Mismatch/Ruggedness Frequency P Test in Signal Type VSWR (MHz) (W) Voltage Result 915 CW > 10:1 9.0 48 No Device at all Phase (3 dB Degradation OM--780--4L Angles Overdrive) PLASTIC MHT1002NR3 Features Characterized with series equivalent large--signal impedance parameters and common source S--parameters Device can be used single--ended or in a push--pull configuration OM--780G--4L PLASTIC Internally input pre--matched for ease of use MHT1002GNR3 Qualified for operation at 50 Vdc Integrated ESD protection 150C case operating temperature 225C die temperature capability GateA31 DrainA Typical Applications Consumer cooking Commercial cooking GateB42 DrainB (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections Freescale Semiconductor, Inc., 2015. All rights reserved. MHT1002NR3 MHT1002GNR3 RF Device Data Freescale Semiconductor, Inc. 1Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +105 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Operating Voltage V 55, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J Total Device Dissipation T =25 C P 833 W C D Derate above 25 C 4.17 W/ C Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 0.24 C/W JC Case Temperature 93C, 350 W CW, 50 Vdc, I = 100 mA, 915 MHz DQ Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C, passes 1500 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level (MSL) Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table 5. Electrical Characteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 105 Vdc, V =0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =48 Vdc, V =0 Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5 Vdc, V =0 Vdc) GS DS (4) On Characteristics Gate Threshold Voltage V 1.3 1.9 2.3 Vdc GS(th) (V =10 Vdc, I = 460 Adc) DS D Gate Quiescent Voltage V 2.0 Vdc GS(Q) (V =48 Vdc, I = 860 mAdc) DS DA Drain--Source On--Voltage V 0.1 0.21 0.3 Vdc DS(on) (V =10 Vdc, I =1.3 Adc) GS D (5) Dynamic Characteristics Output Capacitance C 36.0 pF oss (V =50 Vdc 30 mV(rms)ac 1 MHz, V =0 Vdc) DS GS 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at