Product Information

MG6330

Name: MG6330
Brand: TT Electronics
SKU: MG6330_TTElectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

MG6330 electronic component of TT Electronics

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Datasheet

TRANS,AUDIO,NPN,230V,15A,TO-3P

Manufacturer: TT Electronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 9.1778 ea
Line Total: USD 9.18

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 14 May to Mon. 20 May MOQ : 1 Multiples : 1 MG6330 TT Electronics	1 : USD 9.1778

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Additional Infomation About Product

SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6330, MG6330-R TO-3P Plastic Package Complimentary PNP MG9410 Designed specifically for audio power amplifier applications High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) A MG6330 MG6330-R V Collector Base Voltage 230V 260V CBO V Collector Emitter Voltage 230V 260V CEO V Emitter Base Voltage 5V EBO I Continuous Collector Current 15A C I Base Current 4A B P T = 25C Total Power Dissipation at 200W D A T Maximum Junction Temperature 150C J T Storage Temperature Range -55 to +150C stg THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units R Thermal Resistance, Junction To Case 0.63 C/W JC Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9116 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: SILICON EPITAXIAL PNP TRANSISTOR MG6330, MG6330-R ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Symbols Parameters Test Conditions Min. Typ Max. Units V = 230V MG6330 CB I Collector-Cut-Off Current 100 A CBO V = 260V MG6330-R CB I V = 5V Emitter-Cut-Off-Current 100 A EBO EB Collector-Base Breakdown MG6330 230 V I = 25mA V (BR)CEO C Voltage MG6330-R 260 (1) Collector-Emitter Saturation V I = 5A I = 0.5A 2.0 V CE(sat) C B Voltage Forward-current transfer h I = 5A V = 4V 70 140 FE C CE ratio DYNAMIC CHARACTERISTICS f I = -2A V = 12V Transition Frequency 60 MHz T E CE C V = 10V Output Capacitance f = 1.0MHz 250 pF OB CB NNootteess NNootteess Pulse Width 300us, 2%t SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9116 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website:

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Manufacturer TT Electronics TT Electronics
Product Category Unclassified Unclassified
Transistor Polarity Npn Npn
Collector Emitter Voltage V Br Ceo 230 V 230 V
Transition Frequency Ft 60Mhz 60Mhz
Power Dissipation Pd 200 W 200 W
Dc Collector Current 15 A 15 A
Dc Current Gain Hfe 70 70
Transistor Case Style To-3P To-3P
No Of Pins 3 3
Operating Temperature Max 150 C 150 C
Msl - -
Svhc No Svhc (15-Jun-2015) No Svhc (15-Jun-2015)
Gain Bandwidth Ft Typ 60Mhz 60Mhz