Product Information

MG6331

Name: MG6331
Brand: TT Electronics
SKU: MG6331_TTElectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

MG6331 electronic component of TT Electronics

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See Product Specifications
Datasheet

TRANS,AUDIO,NPN,230V,18A,TO-3P

Manufacturer: TT Electronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 9.072 ea
Line Total: USD 9.07

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 15 May to Tue. 21 May MOQ : 1 Multiples : 1 MG6331 TT Electronics	1 : USD 9.072 10 : USD 3.9973 50 : USD 3.591 100 : USD 3.4729

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Additional Infomation About Product

SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R TO-3P Plastic Package Complimentary PNP MG9411 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) A MG6331 MG6331-R V Collector Base Voltage 230V 260V CBO V Collector Emitter Voltage 230V 260V CEO V Emitter Base Voltage 5V EBO I Continuous Collector Current 18A C I Base Current 4A B P T = 25C Total Power Dissipation at 300W D A T Maximum Junction Temperature 150C J T Storage Temperature Range -55 to +150C stg THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units R Thermal Resistance, Junction To Case 0.42 C/W JC Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9096 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: SILICON EPITAXIAL NPN TRANSISTOR MG6331, MG6331-R ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Symbols Parameters Test Conditions Min. Typ Max. Units V = 230V MG6331 CB I Collector-Cut-Off Current 10 A CBO V = 260V MG6331-R CB I V = 5V Emitter-Cut-Off-Current 10 A EBO EB MG6331 230 Collector-Base Breakdown V I = 25mA V (BR)CEO C Voltage MG6331-R 260 (1) Collector-Emitter Saturation V I = 5A I = 0.5A 2.0 V CE(sat) C B Voltage Forward-current transfer h I = 5A V = 4V 70 140 FE C CE ratio DYNAMIC CHARACTERISTICS f I = -2A V = 12V Transition Frequency 60 MHz T E CE C V = 10V Output Capacitance f = 1.0MHz 250 pF OB CB NNootteess NNootteess Pulse Width 300us, 2%t SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 9096 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website:

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Manufacturer TT Electronics TT Electronics
Product Category Unclassified Unclassified
Transistor Polarity Npn Npn
Collector Emitter Voltage V Br Ceo 230 V 230 V
Transition Frequency Ft 60Mhz 60Mhz
Power Dissipation Pd 300 W 300 W
Dc Collector Current 18 A 18 A
Dc Current Gain Hfe 70 70
Transistor Case Style To-3P To-3P
No Of Pins 3 3
Operating Temperature Max 150 C 150 C
Msl - -
Svhc No Svhc (15-Jun-2015) No Svhc (15-Jun-2015)
Gain Bandwidth Ft Typ 60Mhz 60Mhz