Product Information

OP800C

OP800C electronic component of TT Electronics

Datasheet
Phototransistors Photo Transistor

Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.29 ea
Line Total: USD 4.29

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1000
Multiples : 1000

Stock Image

OP800C
TT Electronics

1000 : USD 3.0245

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Package / Case
Maximum Power Dissipation
Maximum On-State Collector Current
Mounting Style
Peak Wavelength
Collector- Emitter Voltage VCEO Max
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Dark Current
Rise Time
Fall Time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Type
Wavelength
Brand
Maximum Collector Current
Factory Pack Quantity :
Height
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Narrow receiving angle Suitable for applications from 400nm to 1100 Variety of sensitivity ranges TO-18 hermetically sealed package Enhanced temperature range Base lead connection The OP800 Series device consist of a NPN silicon phototransistor mounted in a hermetically sealed package. The narrow receiving angle provides excellent on-axis coupling. TO-18 package oeff r high power dissipation and hostile environment operation. The base lead is bonded to enable conventional transistor biasing. Industrial and commercial electronics Distance sensing Harsh environment Photointerrupters Ro HS Collector-Base Voltage 30 V 30 V Collector-Emitter Voltage Emitter -Base Voltage 5 V 5 V Emitter -Collector Voltage Continuous Collector Current 50 mA o o -65 C to +150 C Storage Temperature Range o o Operating Temperature Range -65 C to +125 C (2) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C (3) Power Dissipation 250 mW Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.5 mW/ C above 25 C. 3. Junction temperature maintained at 25 C. 2 4. Light source is a GaAIAs LED, 890 nm peak emission wavelength, providing a 0.5 mW/cm radiant intensity on the unit under test. The intensity level is not necessarily uniform over the lens area of the unit under test.

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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