TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: leaded Package form: side view lens Dimensions (L x W x H in mm): 5 x 2.65 x 5 High radiant sensitivity Daylight blocking filter matched with 940 nm emitters Fast response times Angle of half sensitivity: = 37 16733 Package matched with IR emitter series TSKS5400S Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note TEKT5400S is a silicon NPN phototransistor with high ** Please see document Vishay Material Category Policy: radiant sensitivity, molded in a plastic package with side www.vishay.com/doc 99902 view lens and daylight blocking filter. Filter bandwidth is matched with 950 nm IR emitters. APPLICATIONS Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.5 TEKT5400S 4 37 850 to 980 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEKT5400S Bulk MOQ: 2000 pcs, 2000 pcs/bulk Side view lens Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 100 mA C Collector peak current t /T 0.5, t 10 ms I 200 mA p p CM Power dissipation T 40 C P 150 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s T 260 C sd Thermal resistance junction/ambient J-STD-051, soldered on PCB R 270 K/W thJA Rev. 1.6, 23-Aug-11 Document Number: 81569 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEKT5400S www.vishay.com Vishay Semiconductors 120 100 80 60 R = 270 K/W thJA 40 20 0 0 10 203040 50607080 90 100 21331 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter voltage I = 1 mA V 70 V C CEO Emitter collector voltage I = 100 A V7V E ECO Collector dark current V = 20 V, E = 0 I 1 100 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 6pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector ligth current I 24 mA ca V = 5 V CE Angle of half sensitivity 37 deg Wavelength of peak sensitivity 920 nm p Range of spectral bandwidth 850 to 980 nm 0.5 2 Collector emitter saturation voltage E = 1 mW/cm , = 950 nm,I = 0.1 mA V 0.3 V e C CEsat Turn-on time V = 5 V, I = 5 mA, R = 100 t 6s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 5s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 110 kHz S C L c BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 2.0 4 10 1.8 V = 5 V CE 3 2 10 1.6 E = 1 mW/cm e = 950 nm 1.4 V = 10 V CE 2 10 1.2 1.0 1 10 0.8 0.6 10 0 20 40 60 80 100 20 40 60 80 100 94 8239 T - Ambient Temperature (C) T - Ambient Temperature (C) amb 94 8249 amb Fig. 1 - Collector Dark Current vs. Ambient Temperature Fig. 2 - Relative Collector Current vs. Ambient Temperature Rev. 1.6, 23-Aug-11 Document Number: 81569 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Collector Dark Current (nA) CEO P - Power Dissipation (mW) V I - Relative Collector Current ca rel