Product Information

OPB730F

OPB730F electronic component of TT Electronics

Datasheet
Optical Switches, Reflective, Phototransistor Output Reflective Sensor TO-72

Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.695 ea
Line Total: USD 10.7

1318 - Global Stock
Ships to you between
Tue. 14 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
312 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 322
Multiples : 500

Stock Image

OPB730F
TT Electronics

322 : USD 12.98
500 : USD 11.8
1000 : USD 11.2
2000 : USD 10.65
4000 : USD 10.1125
5000 : USD 9.6

1318 - WHS 2


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

OPB730F
TT Electronics

1 : USD 10.695
100 : USD 10.281
250 : USD 10.074
500 : USD 9.407
1000 : USD 9.3955
2000 : USD 8.763
5000 : USD 8.602

312 - WHS 3


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 322
Multiples : 322

Stock Image

OPB730F
TT Electronics

322 : USD 15.0377

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Sensing Distance
Output Device
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Forward Voltage
Reverse Voltage
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Packaging
Vf - Forward Voltage
Vr - Reverse Voltage
Sensing Method
Wavelength
Brand
Forward Current
Factory Pack Quantity :
Height
Output Type
Package / Case
Width
Number Of Channels
Cnhts
Hts Code
If - Forward Current
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif

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F-Package Choice of phototransistor or photodarlington output Unfocused for sensing diuff se surface Mounted on standard TO-72 header Available in clear encapsulating epoxy (OPB710, OPB730) Filtered to reduce the eeff ct of visible or fluorescent light (OPB710F, OPB730F) OPB710 and OPB710F consist of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. OPB730 and OPB730F consist of a gallium arsenide infrared emitting diode and an NPN silicon photodarlington. On each sensor, the emitting diode and detector are mounted side -by-side on parallel axes in a standard TO-72 header. A black plastic sleeve is attached and filled with encapsulating epoxy to cover the emitter and detector. The OPB710F and OPB730F (F versions) have a filtering material added to the epoxy to reduce the eeff ct of ambient light. The package contains an internal barrier which prevents diode emissions from reaching the sensor directly. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Part LED Peak Reflection Non-contact reflective object sensor Number Wavelength Sensor Distance Assembly line automation OPB710 Transistor Machine automation OPB710F Machine safety 935 nm 0.250 (6.35mm) OPB730 End of travel sensor Darlington OPB730F Door sensor OP710 Bottom View 3 4 2 1 OPB730 3 4 MILLIMETERS DIMENSIONS ARE IN: INCHES Pin LED Pin Transistor 3 Cathode 4 Collector 2 1 2 Anode 1 Emitter Ro HS Storage Temperature Range -20 C to +85 C Operating Temperature Range 0 C to +70 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Diode Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3 A Reverse DC Voltage 3 V (2) Power Dissipation 75 mW Output Photosensor Collector-Emitter Voltage OPB710, OPB710F 30 V OPB730, OPB730F 15 V Emitter -Collector Voltage 5 V Collector DC Current 25 mA (3) Power Dissipation 150 mW Input Diode (see OP165W for additional information) V Forward Voltage - - 1.5 V I = 50 mA F F I Reverse Current - - 100 A V = 3 V R R Output Phototransistor (See OP505W for additional information) V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA (BR)CEO C V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A (BR)ECO E Collector Dark Current 2 I OPB710, OPB710F - - 100 nA V = 5 V, I = 0, E 0.1 W/cm CEO CE F E OPB730, OPB730F - - 250 Combined (5) Crosstalk I OPB710, OPB710F - - 100 CX nA I = 50 mA, V = 5 V (no reflecting surface) F CE OPB730, OPB730F - - 500 (4) On-State Collector Current I OPB710, OPB710F 150 - - A I = 50 mA, V = 5 V, d = 0.250 (6.35 mm) C(ON) F CE OPB730, OPB730F 1 - - mA Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when ofl w soldering. (2) Derate linearly 1.67 mW/C above 25 C. (3) Derate linearly 3.33 mW/C above 25 C. (4) Measured using Eastman Kodak neutral white test card having 90% diffuse reefl ctance located .250 inch (6.35 mm) from the face of the OPB710/ OPB730. Reference: Eastman Kodak, Catalog E 152 7795. (5) Crosstalk (ICX) is the collector current measured with the indicated current on the input diode and with no reefl cngti surfa ce. Ambient light is ex- cluded with a black box.

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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