OPB855

Slotted Optical Switch OPB855 Features: Low profile 0.27 (6.86 mm) overall height Printed PCBoard mounting Product Photo Here 0.205 (5.21 mm) wide and 0.220 (5.59 mm) deep slot 0.380 (9.65 mm) lead spacing Opaque plastic housing Description: The OPB855 slotted optical switch consists of an infrared emitting diode and a NPN silicon phototransistor, mounted on opposite sides of a 0.205 (5.21 mm) wide slot in an inexpensive plastic housing. Switching of the phototransistor occurs whenever an opaque object passes through the slot. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Applications: Ordering Information Non-contact interruptive object sensing Part Number Description Assembly line automation OPB855 Machine automation Equipment security Machine safety Pin Description 1 Anode 2 Cathode 3 Collector 4 Emitter OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A .2 3/09 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 3 Slotted Optical Switch OPB855 Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage & Operating Temperature Range -40C to +85 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Diode (See OP140 for additional information) Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 1 A Reverse DC Voltage 2 V (2) Power Dissipation 100 mW Output Phototransistor (See OP550 for additional information) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Collector DC Current 30 mA (2) Power Dissipation 100 mW Electrical Characteristics (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode V Forward Voltage - 1.30 1.80 V I = 20 mA F F I Reverse Current - - 100 A V = 2 V R R Output Phototransistor V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA (BR)CEO C V Emitter-Collector Breakdown Voltage 5 - - V I = 100 A (BR)ECO E I Collector-Emitter Dark Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E Combined V Collector-Emitter Saturation Voltage - - 0.4 V I = 400 A, I = 20 mA CE(SAT) C F I On-State Collector Current 1.50 - 20.0 mA V = 5 V, I = 20 mA C(ON) CE F Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.67 mW/C above 25 C. (3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. (4) All parameters tested using pulse technique. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A .2 3/09 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com