OPR5200

Stackable on 2 mm centers Vertical or horizontal mounting Automatic pick -and-place compatible Combine OPR5200 and OPR5500 to create miniature switch The OPR5200 is a miniature high efficiency GaAIAs light emitting diode in a high temperature polyamide chip carrier that is well suited to space-limited applications which require close channel spacing. The OPR5500 is a miniature NPN silicon phototransistor housed in a high temperature polyamide chip carrier that is well suited to space-limited applications which require close channel spacing. When combing the OPR5200 and OPR5500 (miniature phototransistor), this lateral mounting option can be used to create a non-focused reflective or slotted switch configuration. These parts can be automatically placed with standard SMD equipment and can be reflow soldered by virtually any conventional means. Wraparound contacts allow it to be mounted face up or on edge for a beam direction parallel to the seating plane. See Application Bulletin 237 for handling instructions Ordering Information Total Beam Output Power Rise / Fall Times Slotted switches Part LED Peak I (mA) Angle Packaging F (W) Min (nS) Typ Industrial Number Wavelength Typ / Max (Degrees) environments OPR5200 890 nm 350 20 / 50 90 500 / 250 Chip Tray Space-limited Light Current V Input Power E Viewing Angle CE E Part Packaging 2 applications I (A) Min Max (W/cm ) (Degrees) C(ON) Number Sensor OPR5500 Transistor 36 30 150 120 Chip Tray OPR5200 OPR5500 Pin LED Pin Transistor 1 Collector 1 Anode 2 Emitter 2 Cathode 3 N.C. 3 Base 1 1 Collector Base NPN Warning: Front Win- 3 3 Trans. MILLIMETERS TOLERANCE IS .005 0.13 DIMENSIONS ARE IN: dow is pressure sensi- INCHES vti e. Do not apply Emitter pressure or high vacu- 2 um to window. 2 RoHS Storage and Operating Temperature -55 C to +125 C Continuous Forward Current 50 mA Peak Forward Current (1 s pulse width, 10% duty cycle) 1.0 A (1) Power Dissipation 100 mW (2) Solder reflow time within 5C of peak temperature is 20 to 40 seconds 250 C P Output Power 350 - - W I = 20 mA O F V Forward Voltage - - 1.8 V I = 20 mA F F I Reverse Current - - 100 A V = 2 V R R Peak Wavelength - 890 - nm I = 20 mA P F Spectral Bandwidth - 80 - nm I = 20 mA BW F Emission Angle - 45 - - at half power points HP t Output Rise Time - 500 - ns r I = 100 mA, PW = 10.0 s, D.C. = 10% P t Output Fall Time - 250 - ns f Notes: (1) Derate at 1.00 mW/ C above 25 C. (2) Solder time less than 5 seconds at temperature extreme.