Product Information

10N60L-TF1-T

10N60L-TF1-T electronic component of Unisonic

Datasheet
MOSFET N Channel 600V 10A 4V @ 250uA 750mO @ 5A,10V TO-220F1 RoHS
Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8469 ea
Line Total: USD 0.85

82 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
43 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

10N60L-TF1-T
Unisonic

1 : USD 1.0314
10 : USD 0.8562
50 : USD 0.7695
100 : USD 0.683
500 : USD 0.6326
1000 : USD 0.6064

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

TechnologiesThe 10N60L-TF1-T with MOSFET N Channel manufactured by Unisonic Technologies is a high-performance power device that features 600V of breakdown voltage with 10A (continuous) of current capabilities. Its maximum Gate threshold voltage is 4V @ 250uA, and it has a maximum RDS(on) of 750mOhm @ 5A, 10V. Furthermore, this device is constructed in a TO-220F-1 package that is designed to be RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic may also be referenced as

Unisonic Tech
UTC(Unisonic Tech)

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