Product Information

2SK3569

2SK3569 electronic component of Toshiba

Datasheet
MOSFET N Trench 600V 10A 4V @ 1mA 750 mΩ @ 5A,10V TO-220F (TO-220IS) RoHS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.8603 ea
Line Total: USD 3.86

75 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
45 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

2SK3569
Toshiba

1 : USD 3.125
10 : USD 2.4243
50 : USD 1.9296
100 : USD 1.7538
500 : USD 1.6718
1000 : USD 1.6352

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Toshiba"

Image Description
2SK3845(Q) electronic component of Toshiba 2SK3845(Q)

Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3PN
Stock : 0

2SK4012(Q) electronic component of Toshiba 2SK4012(Q)

Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220SIS
Stock : 0

2SK3756(TE12L,F) electronic component of Toshiba 2SK3756(TE12L,F)

Toshiba RF MOSFET Transistors N-Ch Radio Freq 1A 3W 7V VDSS
Stock : 1431

2SK3940(Q) electronic component of Toshiba 2SK3940(Q)

Trans MOSFET N-CH 75V 70A Automotive 3-Pin(3+Tab) TO-3PN
Stock : 0

2SK3799 electronic component of Toshiba 2SK3799

MOSFET, N, 900V, TO-220SIS
Stock : 0

2SK3878(F) electronic component of Toshiba 2SK3878(F)

MOSFET
Stock : 0

2SK3799(Q,M) electronic component of Toshiba 2SK3799(Q,M)

Transistor: N-MOSFET; unipolar; 900V; 8A; 50W; TO220FP
Stock : 50

2SK4013 electronic component of Toshiba 2SK4013

Transistor: N-MOSFET; unipolar; 800V; 6A; 45W; TO220FP
Stock : 488

2SK3569(STA4,X,S) electronic component of Toshiba 2SK3569(STA4,X,S)

MOSFET N Trench 600V 10A 4V @ 1mA 750 mΩ @ 5A,10V SC-67 RoHS
Stock : 80

2SK3798(STA4,Q,M) electronic component of Toshiba 2SK3798(STA4,Q,M)

MOSFET PWR MOSFET PD=40W F=1MHZ
Stock : 0

More Products By Category "MOSFET"

Image Description
IRF7204TRPBF electronic component of Infineon IRF7204TRPBF

MOSFET P Trench 20V 5.3A 2.5V @ 250uA 60 mΩ @ 5.3A,10V SO-8_3.9mm RoHS
Stock : 2998

IPB065N10N3 G electronic component of Infineon IPB065N10N3 G

MOSFET N Trench 100V 80A (Tc) 3.5V @ 90uA 6.5 mΩ @ 80A,10V TO-263-2 RoHS
Stock : 47

IRFR7446TRPBF electronic component of Infineon IRFR7446TRPBF

MOSFET N Trench 40V 56A (Tc) 3.9V @ 100uA 3.9 mΩ @ 56A,10V TO-252-2 (DPAK) RoHS
Stock : 16610

IRFR7746TRPBF electronic component of Infineon IRFR7746TRPBF

MOSFET N Trench 75V 56A (Tc) 3.7V @ 100uA 11.2 mΩ @ 35A,10V TO-252-2 (DPAK) RoHS
Stock : 3990

DMN24H11DS-7 electronic component of Diodes Incorporated DMN24H11DS-7

MOSFET MOSFET BVDSS: 101V-250V
Stock : 78952

DMN1003UCA6-7 electronic component of Diodes Incorporated DMN1003UCA6-7

MOSFET 2 N Channel（Double）Common Drain 23.6A 1.3V @ 1mA 3.2 mΩ @ 5A,4.5V X3-DSN3518-6 RoHS
Stock : 2999

DMT32M5LFG-13 electronic component of Diodes Incorporated DMT32M5LFG-13

MOSFET N Trench 30V 30A 3V @ 250uA 1.7 mΩ @ 20A,10V PowerDI3333-8 RoHS
Stock : 0

DMTH4005SK3-13 electronic component of Diodes Incorporated DMTH4005SK3-13

MOSFET N Trench 40V 95A (Tc) 4V @ 250uA 4.5 mΩ @ 50A,10V TO-252-2 (DPAK) RoHS
Stock : 2500

DMP3013SFV-7 electronic component of Diodes Incorporated DMP3013SFV-7

DMP3013 Series 30 V 12 A P-Channel Enhancement Mode Mosfet - POWERDI333
Stock : 76497

DMT4011LFG-7 electronic component of Diodes Incorporated DMT4011LFG-7

MOSFET N Trench 40V 30A (Tc) 3V @ 250uA 11 mΩ @ 20A,10V PowerDI3333-8 RoHS
Stock : 2045

Additional Infomation About Product

The 2SK3569 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Toshiba. It is a N-channel enhancement type MOSFET with a drain-source breakdown voltage of 600 V, a maximum drain current of 10 A (also known as On-state current), a gate threshold voltage of 4 V (@ 1 mA drain current), a drain-source on-state resistance of 750 mO (@ 5A drain current), and a maximum drain-source voltage of 10 V. It is designed to come with an International Standard TO-220F (also known as TO-220IS) case with a RoHS compliant lead finish. This MOSFET can be used for various applications that require high-power switching including DC-DC converters, motor controls, power supplies, and other types of power management applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted