CHA3664-QAG

UMSUMSUMSUMSUMSUMS A3688AA3667AA3667AA3667AA3667AA3688A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG CHA3664-QAG 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of UMSUMSUMSUMSUMSUMS UMS UMSUMSUMSUMSUMSUMS A3664 applications, from military to commercial A3688AA3688AA3667AA3667AA3667AA3667A A3667AA3667AA3688AA3667AA3667AA3688A YYWW communication systems. YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG The circuit is manufactured with a power pHEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. Main Features Broadband performances: 5-21GHz 20.5dBm saturated output power 15dB gain DC bias: Vd=5Volt @ Id=120mA 16L-QFN3x3 MSL1 Main Electrical Characteristics Tamb.= +25C Symbol Parameter Min Typ Max Unit Freq Frequency range 5 21 GHz Gain Linear Gain 12.5 15 dB Pout-1dB Output Power @1dB gain compression 17.5 19.5 dBm Psat Saturated Output Power 19 20.5 dBm Id Drain current 120 mA Ref. : DSCHA3664-QAG2262 - 18 Sep 12 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 UMSUMSUMSUMSUMSUMS A3688AA3688AA3667AA3667AA3667AA3667A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG UMSUMSUMSUMSUMSUMS A3667AA3667AA3688AA3667AA3667AA3688A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWGCHA3664-QAG 5-21GHz Driver Amplifier Electrical Characteristics Tamb.= +25C, Vd = +5.0V Symbol Parameter Min Typ Max Unit Freq Frequency range 5 21 GHz Gain Linear Gain 12.5 15 dB Pout-1dB Output Power @1dB gain compression 17.5 19.5 dBm Psat Saturated Output Power 19 20.5 dBm C/I3 C/I3 @ Pin/tone = -8dBm , Vd = 5V 5.0 to 7.5GHz 40 dBc 7.5 to 16.5GHz 34 dBc 16.5 to 20GHz 33 dBc dBS11 Input Return Loss -8 -6 dB dBS22 Output Return Loss -10 -8 dB NF Noise Figure 6 dB Vd Drain supply voltage 5 V Id Drain current 120 mA These values are representative of onboard measurements as defined on the drawing in paragraphEvaluation mother boar. (1) Absolute Maximum Ratings Tamb.= +25C Symbol Parameter Values Unit Vd Drain bias voltage 6.0 V Id Drain bias current 175 mA Vg Gate bias voltage -2 to +0.4 V Ig Gate bias current +0.7 mA Maximum negative gate drain Voltage (Vd-Vg/2) Vgd 8 V (an array of resistor divides gate voltage by 2) Pin Maximum continuous input power +10 dBm Tj Junction temperature 175 C Ta Operating temperature range -40 to +85 C Tstg Storage temperature range -55 to +150 C (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Tamb.= +25C o Symbol Pad N Parameter Values Unit Vd 15 Drain voltage +5.0 V Vg 6 Gate voltage -1 to +0.4 V Gate voltage is tuned to obtain 120mA drain current. Vg can be either negative or positive supply bias. Ref. : DSCHA3664-QAG2262 - 18 Sep 12 2/12 Specifications subject to change without notice Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34