xJ SiC Series 100mW - 1200V SiC Cascode UJC1210K Datasheet Description CASE CASE D (2) United Silicon Carbide s cascode products co-package its xJ series high- performance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are G (1) excellent for switching inductive loads, and any application requiring standard gate drive. 1 2 3 S (3) Part Number Package Marking UJC1210K TO-247-3L UJC1210K Features Typical Applications w Max. on-resistance R of 100mW w DS(on)max EV charging w Standard 12V gate drive w PV inverters Maximum operating temperature of 150C w w Switch mode power supplies Excellent reverse recovery w w Power factor correction modules w Low gate charge w Motor drives w Low intrinsic capacitance w Induction heating RoHS compliant w Maximum Ratings Parameter Test Conditions Value Symbol Units Drain-source voltage V 1200 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 21.5 A C 1 I Continuous drain current D T = 100C 14 A C 2 I T = 25C 66.5 Pulsed drain current A DM C 3 V =15V, V <600V t 4 Short-circuit withstand time GS CC ms SC 3 L=15mH, I =2.8A E 64 Single pulsed avalanche energy AS mJ AS P T = 25C Power dissipation 113.6 W tot C Maximum junction temperature T 150 C J,max T , T Operating and storage temperature -55 to 150 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 Seconds Limited by T 1 J,max Pulse width t limited by T 2 p J,max 3 Starting T = 25C J 1 Rev. A, September 2017 For more information go to www.unitedsic.com. xJ SiC Series 100mW - 1200V SiC Cascode UJC1210K Datasheet Electrical Characteristics (T = +25C unless otherwise specified) J Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max BV V =0V, I =1mA Drain-source breakdown voltage 1200 V DS GS D V = 1200V, DS 70 500 V = 0V, T = 25C GS J I Total drain leakage current mA DSS V = 1200V, DS 150 V = 0V, T = 150C GS J V =0V, T =25C, DS j Total gate leakage current I 5 100 nA GSS V = -20V / +20V GS V =12V, I =10A, GS D 70 100 T = 25C J R Drain-source on-resistance mW DS(on) V =12V, I =10A, GS D 161 T = 150C J V = 5V, I = 10mA Gate threshold voltage V 4.5 5 5.5 V G(th) DS D Gate resistance R f = 1MHz, open drain 1.1 W G Typical Performance - Reverse Diode Value Parameter Symbol Test Conditions Units Min Typ Max 1 I T = 25C Diode continuous forward current 21.5 A S C 2 T = 25C I 66.5 A Diode pulse current C S,pulse V = 0V, I =10A, GS F 1.4 2 T = 25C J V Forward voltage V FSD V = 0V, I = 10A, GS F 2 T =150C J V =800V, I =14A, R F Reverse recovery charge Q 112 nC rr V =0V,R = 22W GS G EXT di/dt=1550A/ms, Reverse recovery time t 34 ns rr T = 25C J V =800V, I =14A, R F Reverse recovery charge Q 127 nC rr V =0V,R = 22W GS G EXT di/dt=1550A/ms, Reverse recovery time t 36 ns rr T = 150C J 2 Rev. A, September 2017 For more information go to www.unitedsic.com.