Product Information

UJD06508TS

UJD06508TS electronic component of UnitedSiC

Datasheet
Schottky Diodes & Rectifiers 650V/8A SiC SCHOTTKY DIODE G2, TO-220, ENHANCED SURGE

Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

UJD06508TS
UnitedSiC

1 : USD 5.3903
10 : USD 3.7045
25 : USD 3.5142
50 : USD 3.4
100 : USD 3.3112
250 : USD 3.0828
500 : USD 2.9813
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

UJD06508TS
UnitedSiC

1 : USD 2.7274
N/A

Obsolete
     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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UJ06508TS UJ06508TS is a SiC MOSFET produced by UnitedSiC, Inc. It has an RDSon of 6 mOhms and is made from SiC technology. It supports a wide range of gate drive voltages from 5 V to 18 V, enabling gate drive for low gate drive voltage applications. It has an integrated under-voltage lockout (UVLO) circuit which prevents false turn-on as a result of DC-LINK voltage droop. This device is suitable for high frequency applications where ultra-low On-State resistance and low gate charge are needed.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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