HL6714G USHIO

Data Sheet HL6714G AIGaInP Laser Diode 670nm/10mW Features: Outline Optical output power: 10mW (CW) Visible light output: 670nm Typ. Single transverse mode TE mode oscillation Built-in monitor photodiode Applications Laser beam printer Measurement Sensing Internal Circuit 1 HL6714G Rev.2 Mar. 08, 2013 Data Sheet HL6714G Absolute Maximum Ratings (Tc=25C) Item Symbol Ratings Unit Optical output power Po 10 mW Pulse optical output power Po(pulse) 12* mW LD Reverse Voltage VR(LD) 2 V PD Reverse Voltage VR(PD) 30 V Operating Temperature Topr -10 ~ +50 C Storage Temperature Tstg -40 ~ +85 C Note: Pulse condition : Pulse width 4 s , duty 50% Optical and Electrical Characteristics (Tc=25C) Parameter Symbol Min Typ Max Unit Test Condition Threshold current Ith 20 30 60 mA - Operating voltage Vop - - 2.7 V Po=10mW Slope efficiency s 0.3 0.5 0.8 mW/mA 6(mW)/(I(8mW)-I(2mW)) Beam divergence Parallel to // 5 8 11 Po=10mW, FWHM the junction Beam divergence 18 22 30 Po=10mW, FWHM Perpendicular to the junction Lasing Wavelength p 660 670 680 nm Po=10mW Monitor current Is 0.3 0.9 1.5 mA Po=10mW, V R(PD) =5V 2 HL6714G Rev.2 Mar. 08, 2013