Product Information

VS5810AS

Name: VS5810AS
Brand: Vanguard
SKU: VS5810AS_Vanguard
Availability: OutOfStock
Rating: 5 (11 reviews)

VS5810AS electronic component of Vanguard

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MOSFET N Trench 55V 15A 3V @ 250uA 12 mÎ© @ 5A,4.5V SOP-8 RoHS

Manufacturer: Vanguard

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.4289 ea
Line Total: USD 2.14

0 - Global Stock

MOQ: 5 Multiples: 5
Pack Size: 5

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 04 Jun to Fri. 07 Jun MOQ : 5 Multiples : 5 VS5810AS Vanguard	5 : USD 0.435 50 : USD 0.3573 150 : USD 0.324 500 : USD 0.2822 3000 : USD 0.2556 6000 : USD 0.2447

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Additional Infomation About Product

The VS5810AS MOSFET N Trench manufactured by Vanguard is a surface mount device in 8-pin SOP package with RoHS compliant lead-free construction. It is a high performance N-channel power MOSFET with an optimal channel profile designed specifically for high speed switching applications. It comes with gate-source voltage of up to 55V, drain-current of 15 Amps, stand-by current of 250uA @ 3V and an Rds(on) of 12mOhms @ 5A, 4.5V, making it suitable for various switching circuits. It offers excellent on-state characteristics and lower overall power losses, making it a cost-effective, energy-efficient choice for power management solutions.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Manufacturer Vanguard Vanguard
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package SOP - 8 SOP - 8
Brand Category Vanguard Vanguard
Fet Type n trench n trench
Drain To Source Voltagevdss 55 V 55 V
Continuous Drain Current Id @ 25°C 15 A 15 A
Vgsth Max @ Id 3v @ 250ua 3v @ 250ua
Rds On Max @ Id Vgs 12 m @ 5a,4.5v 12 m @ 5a,4.5v
Power Dissipation-Max Ta 3.1 W 3.1 W
Drain Source Voltage Vdss 55 V 55 V
Continuous Drain Current Id 15 A 15 A
Power Dissipation Pd 3.1 W 3.1 W
Drain Source On Resistance Rdson@Vgs Id 12 mOhms @4.5V , 5A 12 mOhms @4.5V , 5A
Gate Threshold Voltage Vgsth@Id 3 V @250uA 3 V @250uA
Type N Channel N Channel