50N06 VBsemi Elec

50N06 electronic component of VBsemi Elec
50N06 VBsemi Elec
50N06 MOSFETs
50N06  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 50N06 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 50N06 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. 50N06
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: TO-252 MOSFETs ROHS
Datasheet: 50N06 Datasheet (PDF)
Price (USD)
1: USD 1.4258 ea
Line Total: USD 1.43 
Availability : 26
  
Ship by Fri. 24 Oct to Thu. 30 Oct
QtyUnit Price
1$ 1.4258
10$ 1.1652
50$ 0.6343
100$ 0.5481
500$ 0.4951
1000$ 0.4694

Availability 26
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4258
10$ 1.1652
50$ 0.6343
100$ 0.5481
500$ 0.4951
1000$ 0.4694

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the 50N06 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 50N06 and other electronic components in the MOSFETs category and beyond.

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The 50N06 is a TO-252 MOSFET manufactured by VBsemi Elec that is RoHS compliant and constructed with a surface mount plastic encapsulated package. It is a fully isolated metal oxide semiconductor field-effect transistor featuring a 2A continuous drain current and a 600V breakdown voltage. The 50N06 has a fast switching speed and excellent temperature stability, making it ideal for power management applications. It is available with a standard drain-source on resistance of 0.046 ohms. The device also features an isolation voltage rating of 2500Vrms (min) between the drain and source contact and the gate and leads contact.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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